Lifetime Investigations of 4H-SiC PiN Power Diodes

Sergey A. Reshanov; Wolfgang Bartsch; Bernd Zippelius; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.615-617.699

Paper Titles

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC
p.683

Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET
p.687

Grayscale Junction Termination for High-Voltage SiC Devices
p.691

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage
p.695

Lifetime Investigations of 4H-SiC PiN Power Diodes
p.699

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
p.703

EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
p.707

VJFET Based All-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications
p.711

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications
p.715

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Lifetime Investigations of 4H-SiC PiN Power Diodes

Lifetime Investigations of 4H-SiC PiN Power Diodes

Abstract:

Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 s to 2.1 s; these values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z1/2-center as a lifetime killer is discussed.