Silicon Carbide and Related Materials 2008

Volumes 615-617

doi: 10.4028/www.scientific.net/MSF.615-617

Paper Title Page

Authors: Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Giuseppe Moschetti, Vito Raineri, Jean Lorenzzi, Gabriel Ferro

Abstract: This paper reports on the macro- and nanoscale electro-structural evolution, as a function of annealing temperature, of nickel-silicide...

569
Authors: Andrian V. Kuchuk, V.P. Kladko, Anna Piotrowska, Renata Ratajczak, Rafał Jakieła

Abstract: In this study, the formation of Ni, Ni-rich Ni2Si and Si-rich NiSi2 ohmic contacts to n-type 4H-SiC are investigated. The Ni/n-SiC ohmic...

573
Authors: Irina P. Nikitina, Konstantin Vassilevski, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, S.K. Ray, C. Mark Johnson

Abstract: Nickel silicide Schottky contacts were formed on 4H-SiC by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100...

577
Authors: Bharat Krishnan, Siva Prasad Kotamraju, Galyna Melnychuk, Neil Merrett, Yaroslav Koshka

Abstract: Low-temperature halo-carbon homoepitaxial growth is suitable for selective epitaxial growth of 4H-SiC using SiO2 mask. A possibility of...

581
Authors: Maher Soueidan, Mihai Lazar, Duy Minh Nguyen, Dominique Tournier, Christophe Raynaud, Dominique Planson

Abstract: Complementary lateral structures, N-JFETs, P-JFETS and bipolar diodes, have been implemented in p and n-type 4H-SiC wafers with epilayers....

585
Authors: Christopher L. Frewin, Camilla Coletti, Christian Riedl, Ulrich Starke, Stephen E. Saddow

Abstract: A comprehensive study on the hydrogen etching of numerous SiC polytype surfaces and orientations has been performed in a hot wall CVD...

589
Authors: Andrew J. Trunek, J. Anthony Powell, Philip G. Neudeck, M. Mrdenovich

Abstract: We report on new observations made, when 4H-SiC, Si-face substrate mesas, having either low tilt-angle (< 1°) with steps or step-free top...

593
Authors: Kinga Kościewicz, Wlodek Strupiński, Andrzej Roman Olszyna

Abstract: Crystallographic quality of the epitaxial layers depends on the process temperature, partial pressures of active components and the surface...

597
Authors: Yue Ke, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke

Abstract: This article discusses the electrochemical polishing of silicon-face p-type 4H SiC using diluted aqueous HF solution. Etchings on the...

601
Authors: Gi Sub Lee, Hyun Hee Hwang, Chang Hyun Son, Jung Woo Choi, Won Jae Lee, Byoung Chul Shin, Jung Doo Seo, Kap Ryeol Ku, Hae Do Jeong

Abstract: The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation...

605

Showing 141 to 150 of 247 Paper Titles