Preface
Committees
Sponsor
Overview
Defect Status in SiC Manufacturing
p.3
p.3
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
p.7
p.7
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
p.11
p.11
Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
p.15
p.15
Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
p.19
p.19
Preface
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 615-617)
Online since:
March 2009
Сopyright:
© 2009 Trans Tech Publications Ltd. All Rights Reserved
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