Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

K.Y. Cheong; Wook Bahng; Nam Kyun Kim

doi:10.4028/www.scientific.net/MSF.483-485.689

Paper Titles

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
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High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
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High Temperature NO Annealing of Deposited SiO₂ and SiON Films on N-Type 4H-SiC
p.685

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
p.689

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
p.693

Effects of N₂O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
p.697

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
p.701

Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
p.705

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characteristics of Post-Nitridation Rapid-Thermal...

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC

Abstract:

In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.

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Materials Science Forum (Volumes 483-485)

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689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.689

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Online since:

May 2005

Authors:

K.Y. Cheong, Wook Bahng, Nam Kyun Kim

Keywords:

Electron Trap, Interface States (or Traps), Nitrided Gate Oxide, Oxide Breakdown Field, Rapid Thermal Annealing (RTA)

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