High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC

Hiroshi Yano; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.483-485.685

Paper Titles

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
p.673

High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
p.681

High Temperature NO Annealing of Deposited SiO₂ and SiON Films on N-Type 4H-SiC
p.685

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
p.689

Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
p.693

Effects of N₂O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
p.697

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
p.701

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High Temperature NO Annealing of Deposited SiO₂ and SiON Films on N-Type 4H-SiC

Abstract:

High temperature (1250 oC) NO annealing was performed for deposited oxide (SiO2) and oxynitride (SiON) films on n-type 4H-SiC. Interface state density of SiO2 samples was dramatically reduced (one order of magnitude) by NO annealing compared to N2 annealing, resulting in 1x1011 cm-2eV-1 at 0.2 eV below the conduction band edge. In contrast, that of NO annealed SiON samples showed only 30% decrease and was still in the range of 1x1012 cm-2eV-1. These different effects of NO annealing against SiO2 and SiON are probably due to different reaction mechanism at the interface. Breakdown field of SiO2 samples annealed in NO was as high as 10 MV/cm. Barrier height of this sample was 2.86eV, which is close to the ideal value.