4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
A. Pérez-Tomás et al., "4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O", Materials Science Forum, Vols. 483-485, pp. 673-676, 2005