4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O

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Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

673-676

Citation:

A. Pérez-Tomás et al., "4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O", Materials Science Forum, Vols. 483-485, pp. 673-676, 2005

Online since:

May 2005

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$38.00

[1] L. A. Lipkin, M. K. Das and J. W. Palmour, Mater. Sci. Forum: Vol. 389-393 (2002), p.985.

[2] P. Jamet and S. Dimitrijev: Appl. Phys. Lett. Vol. 79 (2001), p.323.

[3] K. Y. Cheong, S. Dimitrijev, J. Han and H. B. Harrison: J. Appl. Phys. Vol. 93 (2003), p.5682.

[4] V. V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong and S. Dimitrijev: Appl. Phys. Lett. Vol. 82 (2003), p.323.

[5] E. H. Nicollian and A. Goetzberger: Bell Syst. Tech. J., Vol. 46 (1967), p.1055.