4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O

Amador Pérez-Tomás; Dominique Tournier; Philippe Godignon; Narcis Mestres; José Millan

doi:10.4028/www.scientific.net/MSF.483-485.673

Paper Titles

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
p.665

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
p.673

High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

An In-Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO₂ MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
p.681

High Temperature NO Annealing of Deposited SiO₂ and SiON Films on N-Type 4H-SiC
p.685

Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
p.689

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4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O

Abstract:

Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.