4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O

Abstract:

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Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

673-676

DOI:

10.4028/www.scientific.net/MSF.483-485.673

Citation:

A. Pérez-Tomás et al., "4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O", Materials Science Forum, Vols. 483-485, pp. 673-676, 2005

Online since:

May 2005

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$35.00

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