Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Junji Senzaki; Kazutoshi Kojima; Tomohisa Kato; Atsushi Shimozato; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.483-485.661

Paper Titles

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
p.645

n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
p.649

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
p.665

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N₂O and NO Ambient
p.669

4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
p.673

High-Reliability ONO Gate Dielectric for Power MOSFETs
p.677

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Effects of Dislocations on Reliability of Thermal...

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

Abstract:

The effects of dislocations in n-type 4H-SiC(0001) epitaxial wafers on the reliability of thermal oxides have been investigated. Charge-to-breakdown (QBD) values of thermal oxides decrease with increase in the dislocations under a gate-oxide area. Nomarski microscope observations show that dielectric breakdown of thermal oxides occurs at the position of dislocation in epitaxial layer. It is reavealed that basal plane dislocation is the most common cause of the dielectric breakdown.

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Materials Science Forum (Volumes 483-485)

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661-664

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.661

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Online since:

May 2005

Authors:

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda

Keywords:

Dielectric Breakdown, Dislocation, KOH, MOS Reliability, Thermal Oxide

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