Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation

Servane Blanqué; J. Lyonnet; Jean Camassel; R. Pérez; P. Terziyska; Sylvie Contreras; Philippe Godignon; Narcis Mestres; Jordi Pascual

doi:10.4028/www.scientific.net/MSF.483-485.645

Paper Titles

J-V Characteristics of Al⁺ Ion Implanted p⁺/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C
p.629

P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
p.633

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
p.637

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si⁺-/N⁺-Co-Implanted 4H-SiC
p.641

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
p.645

n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
p.649

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
p.661

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Homogeneity of Nitrogen and Phosphorus Co-Implants...

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation

Abstract:

We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC semi-insulating wafer. We used a full 35 mm wafers on which, after implantation and annealing, 77 reticules with Hall bars and TLM motifs were processed. We found an average sheet resistance of 531 W/square with 30 W/square standard deviation.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

Pages:

645-648

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.645

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Online since:

May 2005

Authors:

Servane Blanqué, J. Lyonnet, Jean Camassel, R. Pérez, P. Terziyska, Sylvie Contreras, Philippe Godignon, Narcis Mestres, Jordi Pascual

Keywords:

Full Wafer Measurements, Implantation, N and P Co-Doping

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References

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