Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC
Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400°C and 1700°C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or Cvacancies. At our present knowledge, we favor an (NX-SiY)-complex.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
F. Schmid et al., "Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 641-644, 2005