Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC

Frank Schmid; Thomas Frank; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.483-485.641

Paper Titles

Ar Annealing at 1600°C and 1650°C of Al⁺ Implanted p⁺/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature
p.625

J-V Characteristics of Al⁺ Ion Implanted p⁺/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C
p.629

P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
p.633

Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
p.637

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si⁺-/N⁺-Co-Implanted 4H-SiC
p.641

Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
p.645

n⁺/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
p.649

Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS
p.653

The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
p.657

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Experimental Evidence for an Electrically Neutral...

Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si⁺-/N⁺-Co-Implanted 4H-SiC

Abstract:

Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400°C and 1700°C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or Cvacancies. At our present knowledge, we favor an (NX-SiY)-complex.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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641-644

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.641

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May 2005

Authors:

Frank Schmid, Thomas Frank, Gerhard Pensl

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Donor Deactivation, Ion Implantation, Nitrogen Donor

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References

[1] F. Schmid, G. Pensl: Mat. Sci. Forum Vol. 457-460 (2004), p.909.

Google Scholar

[2] F. Schmid, G. Pensl: Appl. Phys. Lett. Vol. 84 (2004), p.3064.

Google Scholar

[3] D. Åberg, A. Hallén, P. Pellegrino, B.G. Svensson: Appl. Phys. Lett. Vol. 78 (2001), p.2908.

Google Scholar

[4] T. Troffer, C. Peppermüller, G. Pensl, K. Rottner, A. Schöner: J. Appl. Phys. Vol. 80 (1996), p.3739.

DOI: 10.1063/1.363325

Google Scholar

[5] G. Rutsch, R.P. Devaty, W.J. Choyke, D.W. Langer, L.B. Rowland: J. Appl. Phys. Vol. 84, (1998), p. (2062).

Google Scholar

[6] G. Wellenhofer, U. Rössler: phys. stat. sol. (b) Vol. 202 (1997), p.107.

Google Scholar

[7] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordell: phys. stat. sol. (a) Vol. 162 (1997), p.199.

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[8] T. Dalibor, C. Peppermüller, G. Pensl, S. Sridhara, R. P. Devaty, W. J. Choyke, A. Itoh, T. Kimoto, and H. Matsunami: Inst. Phys. Conf. Ser. Vol. 142 (1996), p.517.

DOI: 10.1063/1.114800

Google Scholar

[9] U. Gerstmann, E. Rauls, Th. Frauenheim, H. Overhof: Phys. Rev. B Vol. 67 (2003), pp.205202-1.

Google Scholar