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Online since: October 2014
Authors: Aleksander Petelin, Yulia Petelina, Konstantin A. Polosukhin, Svetlana Kolupaeva
Introduction
The fundamentals of the dislocation motion modeling were laid in the middle of the last century [1-7].
Fig. 1.
The velocity of the dislocation loop, calculated using the model [17] taking into account (curve 1) and without taking into account (curve 3) the intensity of the point defect generation using the model [18] (curve 2) at different moments of time from its emission by a dislocation source, with: а – 1×10-9, b– 2×10-7, c – 3,4×10-7, d – 5×10-7, e – 1×10-6, f – 3×10-6, g – 6×10-6, h – 9×10-6, i – 1,1×10-5 The velocity of the edge dislocation, calculated using the mathematical model [17], asymptotically approaches to stationary value (Fig. 1a,d, curve 7), the radius of the dislocation increases almost linearly (Fig. 1, b, curve 7) while the dislocation motion is not limited.
References [1] A.J.E.
Ivanchin, Structural levels of deformation in solids, Structural levels of deformation of solids, Soviet Physics Journal. 25, 6 (1982) 479-497
Fig. 1.
The velocity of the dislocation loop, calculated using the model [17] taking into account (curve 1) and without taking into account (curve 3) the intensity of the point defect generation using the model [18] (curve 2) at different moments of time from its emission by a dislocation source, with: а – 1×10-9, b– 2×10-7, c – 3,4×10-7, d – 5×10-7, e – 1×10-6, f – 3×10-6, g – 6×10-6, h – 9×10-6, i – 1,1×10-5 The velocity of the edge dislocation, calculated using the mathematical model [17], asymptotically approaches to stationary value (Fig. 1a,d, curve 7), the radius of the dislocation increases almost linearly (Fig. 1, b, curve 7) while the dislocation motion is not limited.
References [1] A.J.E.
Ivanchin, Structural levels of deformation in solids, Structural levels of deformation of solids, Soviet Physics Journal. 25, 6 (1982) 479-497
Online since: October 2011
Authors: Konstantinos M. Paraskevopoulos, Ourania Menti Goudouri, George S. Polymeris, George Kitis
The applied experimental protocol was the following:
Step 1.
The curves correspond to immersion times of 0 min (a), 1 min (b), 2 min (c), 4 min (d), 8 min (e), 30 min (f), 1h (g), 6h (h), 1 day (i) and 6 days (j)
Normalised 110 oC TL Intensity 1,0 160 110 oC TL (a.u.
References [1] L.L.
Meas. 23 (1994) 471-479
The curves correspond to immersion times of 0 min (a), 1 min (b), 2 min (c), 4 min (d), 8 min (e), 30 min (f), 1h (g), 6h (h), 1 day (i) and 6 days (j)
Normalised 110 oC TL Intensity 1,0 160 110 oC TL (a.u.
References [1] L.L.
Meas. 23 (1994) 471-479
Online since: December 2018
Authors: Anongnat Somwangthanaroj, Pollawat Charoeythornkhajhornchai
The molar ratio of H2O2 to NR was calculated to 3:1.
In addition, synthesized GO revealed OH stretching from hydroxyl group at 3400 cm-1, carbonyl stretching from carboxylic acid at 1700 cm-1, C-C stretching from aromatic ring of graphene structure at 1600 cm-1 and C-O-C stretching from epoxide group at 1000-1200cm-1.
References [1] E.
Zarbin, Multifunctional and environmentally friendly nanocomposites between natural rubber and graphene or graphene oxide, Carbon, 78 (2014) 469-479
Nanomater., 2015 (2015) 1-7
In addition, synthesized GO revealed OH stretching from hydroxyl group at 3400 cm-1, carbonyl stretching from carboxylic acid at 1700 cm-1, C-C stretching from aromatic ring of graphene structure at 1600 cm-1 and C-O-C stretching from epoxide group at 1000-1200cm-1.
References [1] E.
Zarbin, Multifunctional and environmentally friendly nanocomposites between natural rubber and graphene or graphene oxide, Carbon, 78 (2014) 469-479
Nanomater., 2015 (2015) 1-7
Online since: January 2012
Authors: Lin Wang, Yong Sheng Shi, Yu Zhen Shi
This paper addresses the study on ion-exchange process to remove hexavalent selenium in raw water.
1 Methodology and material
1.1Experimental device
The experiment consists of static and dynamic tests.
In the range from 1 to 300μg/L, the testing linearity is high.
Tel:0086-0871-3801078 (86)13908845718 References [1]Rege,M.A.
Bioeng.62(4):479-484
Journal of Water Supply,58(1),51-56.
In the range from 1 to 300μg/L, the testing linearity is high.
Tel:0086-0871-3801078 (86)13908845718 References [1]Rege,M.A.
Bioeng.62(4):479-484
Journal of Water Supply,58(1),51-56.
Online since: April 2003
Authors: Stuart Hampshire
After 1 hour at the
melting temperature, the glass is poured into a preheated graphite mould and annealed at
850-950°C for 1 h prior to slow furnace cooling [11].
Figure 1 shows the glass forming region in the Y-SiAl-O-N system [8].
The properties of the parent glasses are presented in table 1.
The strength of the oxynitride glass after treatment at Tg-20°C (344 MPa) is twice the strength measured on the non-treated glass and after treatment at Tg+20°C is three times higher (479 MPa).
References [1] K.H.
Figure 1 shows the glass forming region in the Y-SiAl-O-N system [8].
The properties of the parent glasses are presented in table 1.
The strength of the oxynitride glass after treatment at Tg-20°C (344 MPa) is twice the strength measured on the non-treated glass and after treatment at Tg+20°C is three times higher (479 MPa).
References [1] K.H.
Online since: October 2016
Authors: Yuuki Sugano, Kenji Hirakuri, Keisuke Sato, Naoki Fukata
The SEM image of the composite microparticles is shown in Figure 1(a).
The composite microparticles exhibited the strong IR absorption peaks at around 480, 725 and 1433 in addition to an asymmetric IR absorption peak at around 3327 cm-1 with a shoulder at around 3449 cm-1.
The peaks at around 480 and 725 cm-1 were attributed to the Si-F deformation and Si-F stretching modes, respectively [11].
References [1] S.
Colinge, Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors, Nature 479 (2011) 310-316
The composite microparticles exhibited the strong IR absorption peaks at around 480, 725 and 1433 in addition to an asymmetric IR absorption peak at around 3327 cm-1 with a shoulder at around 3449 cm-1.
The peaks at around 480 and 725 cm-1 were attributed to the Si-F deformation and Si-F stretching modes, respectively [11].
References [1] S.
Colinge, Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors, Nature 479 (2011) 310-316
Online since: February 2014
Authors: Stanislav Unčík, Svetozár Balkovic, Mária Hlavinková, Alena Struhárová
The dominant components are SiO2 and CaO (rough rate 1: 1), that make 50 to 60 % of the fly ash substance.
Chemical structure is shown in table 1.
Al2O3 18,83 28,83 CaO 21,56 2,02 Sulphur as SO3 7,64 0,27 Fe2O3 5,95 9,40 MgO 1,06 1,25 MnO 0,071 0,04 K2O 1,33 1,52 Na2O 0,039 0,34 TiO2 1,39 1,88 SiO2 37,06 53.09 Loss on ignition (at 850oC) 4,44 0,83 Autoclaved aerated concrete As a part of experimental production of the autoclaved aerated concrete there was used fluidized fly ash of dosage mentioned further.
For example, dried AAC with bulk density 479 kg/m3 showed rate λ circa 0,09 W/m.K, at 5% moisture content of material the rate λ = 0,11 W/m.K, at 10 % moisture content λ = 0,14 W/m.K and at 30 % moisture content λ = 0,27 W/m.K.
References [1] S.
Chemical structure is shown in table 1.
Al2O3 18,83 28,83 CaO 21,56 2,02 Sulphur as SO3 7,64 0,27 Fe2O3 5,95 9,40 MgO 1,06 1,25 MnO 0,071 0,04 K2O 1,33 1,52 Na2O 0,039 0,34 TiO2 1,39 1,88 SiO2 37,06 53.09 Loss on ignition (at 850oC) 4,44 0,83 Autoclaved aerated concrete As a part of experimental production of the autoclaved aerated concrete there was used fluidized fly ash of dosage mentioned further.
For example, dried AAC with bulk density 479 kg/m3 showed rate λ circa 0,09 W/m.K, at 5% moisture content of material the rate λ = 0,11 W/m.K, at 10 % moisture content λ = 0,14 W/m.K and at 30 % moisture content λ = 0,27 W/m.K.
References [1] S.
Online since: June 2013
Authors: Fu Xie, Yun Yun Du
The architecture for trusted computing is shown in Fig. 1.
TPM Measurement and Signature (1) By using the measurement algorithm of system component, TPM measure the system components, the metric value of components (i = 1... k) is.
(1) Choose the random number, and calculate ,
References [1] Feng Dengguo, Zhang Min, Zhang Yan, Xu Zhen.
Chinese Computer Systems 2012, 33 (3): 472-479(in Chinese) [9] Zhang Hui, Xing PeiZheng.
TPM Measurement and Signature (1) By using the measurement algorithm of system component, TPM measure the system components, the metric value of components (i = 1... k) is.
(1) Choose the random number, and calculate ,
References [1] Feng Dengguo, Zhang Min, Zhang Yan, Xu Zhen.
Chinese Computer Systems 2012, 33 (3): 472-479(in Chinese) [9] Zhang Hui, Xing PeiZheng.
Online since: December 2012
Authors: Erick Petta Marinho, Alberto Sakata, Erika Fernanda Prados, Gilmar Ferreira Batalha
Fig. 1 shows the control instrumentation setup.
Fig. 1- Experimental Setup Strain Measurement.
εeq(t)=lne0e(h) (3) εeqt=dεeqdt= εeqtn+1- εeq(tn-1)tn+1-tn-1 (4) Fig. 5 - Recorded spf forming strain rate (see detailed plot at left side plot).
References [1] N.
Sci. 12 (1970) 479-490
Fig. 1- Experimental Setup Strain Measurement.
εeq(t)=lne0e(h) (3) εeqt=dεeqdt= εeqtn+1- εeq(tn-1)tn+1-tn-1 (4) Fig. 5 - Recorded spf forming strain rate (see detailed plot at left side plot).
References [1] N.
Sci. 12 (1970) 479-490