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References [1] Y H Zhang, YQ Li and G T Li: Chemistry of Materials, Vol.19(2007):1939 [2] M S Biswas:Adv Polym Sci, Vol.155(2001):167 [3] Y H Zhang, J T Wu and Q.Yan: Polymer, Vol.45(2004):7579 [4] Y H Zhang, Y Li and S Y Fu: Polymer, Vol.46(2005):8373 [5] Y H Zhang, S G Lu and Y Q Li: Advanced Materials, Vol.17 (2005):1056 [6] Y H Zhang, SM Ke, H.Huang, HLW Chan: Applied Physics Letters, 2008, 92:052910
Composite Science and Technology, 2005, (65):1743 [8] Y H Zhang, Z M Dang and S Y Fu: Chem Phys Lett, Vol.401(2005):553 [9] Y H Zhang, Z M Dang, J H Xin: Macromolecular Rapid Communications, 2005(26):1473 [10] YQ Wen, YH Zhang and Q S Su: Key Engineering Materials. 2007, (334-335):869
[11] Y H Zhang, RKY Li and S Fu: Materials Science Forum, 2005, Vol.475-479 (2005):1073
[12] YH Zhang, YLi and HT Huang: Key Engineering Materials.Vol.334-335 (2007):821.

Pei, et al: Key Engineering Materials Vol.304-305(2006), p. 588-592 [7] T.
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Orlov: Materials Science Forum, Vol. 503504 (2005), p. 335 [15] A.I.
Soloviev: Reviews in Advanced Materials Science, Vol.10 (2005), No. 3 p.235 [17] A.I.
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X-ray Diffraction and Barkhausen Noise Diagnostics of Thick Welds Prepared by Metal Active Gas and Laser Welding KOLAŘÍK Kamil 1, a *, GANEV Nikolaj 2,b, TROJAN Karel 3,c, ŘÍDKÝ Ondřej 4,d, ZUZÁNEK Lukáš 5,e and ČAPEK Jiří 6,f 1, 2, 3, 6 CTU in Prague, Department of Solid State Engineering, Faculty of Nuclear Sciences and Physical Engineering, Trojanova 13, 120 00 Prague 2, Czech Republic 4, 5 TU of Liberec, Institute for Nanomaterials, Advanced Technologies and Innovation, Studentská 1402/2, 461 17 Liberec 1, Czech Republic 3List all distinct addresses in the same way a *kamil.kolarik@email.cz, bnikolaj.ganev@fjfi.cvut.cz, ctrojaka2@fjfi.cvut.cz, dondrej.ridky@seznam.cz, elukas.zuzanek@seznam.cz, fcapekjir@fjfi.cvut.cz Keywords: X-ray diffraction; Barkhausen noise; residual stresses; laser welding; metal active gas welding.
These advanced laser welds are promising for use in transport engineering industry owing these profitable changes of real crystallographic structure in comparison with conventional laser welds [2].
Digler, Sources and Consequences of Residual Stresses due to Welding, Materials science forum (2014) 2777-2785.

Polyimide that serves as a typical kind of engineering materials has widely been used in different fields, such as the aerial, nuclear and microelectronic industry.
And they also displays excellent tensile strength and the thermal properties, these polyimide nanocomposites have the prospect for being used as advanced dielectricmaterials in microelectronic applications.
References [1] E P Giannelis: Appl Organomet Chem, Vol.12(1998), p. 675 [2] M S Biswas:Adv Polym Sci, Vol.155(2001), p.167 [3] Y H Zhang, Z M Dang and S Y Fu: Chem Phys Lett, Vol.401(2005), p. 553 [4] Y H Zhang, S G Lu and Y Q Li: Advanced Materials, Vol.17 (2005) , p. 1056 [5] Y H Zhang, YQ Li and G T Li: Chemistry of Materials, Vol.19(2007), p. 1939 [6] Y H Zhang, SM Ke, H.Huang, HLW Chan: Applied Physics Letters, 2008,92:052910
[7] Y H Zhang, Z M Dang, J H Xin: Macromolecular Rapid Communications,2005(26):1473 [8] Y H Zhang, J T Wu and Q.Yan: Polymer, Vol.45(2004), p.7579 [9] Y H Zhang, Y Li and S Y Fu: Polymer, Vol.46(2005), p.8373 [10] Y H Zhang, S Y Fu and S Y Yang: Composite Science and Technology, 2005,(65):1743 [11] Y H Zhang, R K Y Li and S Y Fu: Materials Science Forum, 2005, Vol.475-479(2005), p.1073 [12] Y H Zhang, Y Li and H T Huang: Key Engineering Materials.
Vol.334-335(2007), p.821 [13] Y Q Wen, Y H Zhang and Q S Su: Key Engineering Materials. 2007,(334-335):869.

High-density ceramic materials on the basis of silicon carbide DALLAEVA Dinara Sultanovna1,2, KARDASHOVA Gulnara Darvinovna2, SAFARALIEV Gadjimet Kerimovich2 and TOMÁNEK Pavel1 1Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno, Czech Republic 2Dagestan State Technical University, av.
This defines the advanced market sectors where these materials are penetrating and forcing out the analogues of tradition materials.
Lebedev: in IEEE Engineering Foundation Conference on High-Temperature Electronic Materials, Devices and Sensors (1998), p. 196 [4] Hai Yun Jin, Zhen Huang, Bo He, Nai Kui Gao, Liang Shao, and Guan Jun Qiao: Mater.
Forum, 724 (2012), p. 143 [5] B.

Experiments and Numerical Simulations on Laser Welding Deformation of Thin Plate Considering Constraint Clamp Pan Zeng1,2,a, Liping Lei1,2,b and Le Mei1,2,c 1Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China 2Key Laboratory for Advanced Materials Processing Technology, Ministry of Education of China, Beijing 100084, China azengp@mail.tsinghua.edu.cn, bleilp@mail.tsinghua.edu.cn, cmeteor_05071003@126.com Keywords: Welding deformation, Simulation, Equivalent welding element, Constraint clamp Abstract.
Yuan, Symposium of the Japan Welding Engineering Society. 6(1988)348-353
Zeng, Materials Science Forum, 575-578 (2008)947-952.

Study on Grinding Force Model in Ultrasonic Vibration Assisted Grinding for Ductile materials WANG Yana, LIN Binb, WANG Shaoleic, CAO Xiaoyand Key Laboratory of Advanced Ceramics and Machining Technology, Tianjin University, Ministry of Education, China asatansdestiny@163.com,btdlinbin@126.com.
Acknowledgements The authors appreciate supports of the National 863 High Technology Research and Development Program of China (grant no. 2009AA044204&2013AA040103) Reference： [1] Gunter Spur, Sven-EriKHoll: Production Engineering Vol. 4 (1997), p. 9 [2] Zhang hong li, Zhang jianhua: Materials Science Forum Vol. 522-533 (2006), p. 773 [3] Pei, Z.
SME Vol. 20 (1992), p. 211 [6] Wang Jun ming, Ye Renzhen,TangYangping, Bin Hongzan: Diamond & Abrasives Engineering Vol. 30 (2010), p. 67

Horsfall1, b 1 School of Electrical, Electronic and Computer Engineering, Newcastle University, NE1 7RU 2 Raytheon UK, Glenrothes, Fife, KY7 5PY, UK a l.c.martin@ncl.ac.uk, balton.horsfall@ncl.ac.uk Keywords: Silicon Carbide, CMOS, high temperature, oxide.
It is an ideal solution for MOS devices for high-temperature use as it is the only wide bandgap semiconductor that produces SiO2 as its native oxide, and it can be produced through thermal oxidation, which is known to produce superior dielectric properties for MOS applications similar to the already advanced silicon technology.
Acknowledgements This work was supported by the UK Engineering and Physical Science Research Council (EPSRC) and Raytheon UK.
Forum, 679-680 (2011) 726 [3] H.G.
Levinshtein, Properties of Advanced Semiconductor Materials, Wiley, New York, 2001 [10] C-Y.

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs) Akio Takatsuka1, 2, a, Yasunori Tanaka1, b, Koji Yano2, c, Tsutomu Yatsuo 1, d and Kazuo Arai3, e 1 Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 2 Interdisciplinary Graduate School of Medicine and Engineering,University of Yamanashi, Takeda-4, Kofu 400-8511, Japan 3 Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan a a-takatsuka@aist.go.jp, byasunori-tanaka@aist.go.jp, cyano@esd.yamanashi.ac.jp, d t-yatsuo@aist.go.jp, ek-arai@aist.go.jp Keywords: static induction transistors, JFET, embedding epitaxial growth, TEM, SSRM Abstract.
Forum Vol. 600-603 (2009), p. 171 [3] N.
Konstantinov: Materials Science and Engineering B Vol. 61-62 (1999), p. 130 Fig. 6 Two-dimensional SSRM image of the SiC-BGSIT X Positon [nm] Y Positon [nm] SSRM Signal [Ω] Buried gate Channel region Depletion layer