Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Akio Takatsuka; Yasunori Tanaka; Koji Yano; Tsutomu Yatsuo; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.645-648.535

Paper Titles

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC
p.519

A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
p.523

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
p.527

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy
p.531

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.535

Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics
p.539

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
p.543

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
p.547

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
p.551

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Crystalline Quality of Channel Regions in SiC...

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Abstract:

We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission electron microscopy and scanning spreading resistance microscopy. It was found that the channel regions have high crystalline quality and no significant fluctuations in doping concentration.