Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Abstract:

Article Preview

We investigated the crystalline quality and electrical properties of the channel regions in 4H-SiC buried gate static induction transistors (SiC-BGSITs). To accurately determine the characteristics of the channel regions, we performed transmission electron microscopy and scanning spreading resistance microscopy. It was found that the channel regions have high crystalline quality and no significant fluctuations in doping concentration.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

535-538

DOI:

10.4028/www.scientific.net/MSF.645-648.535

Citation:

A. Takatsuka et al., "Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)", Materials Science Forum, Vols. 645-648, pp. 535-538, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.