Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
High temperature C-V characterization with and without UV illumination has been performed on n-type 4H-SiC MOS capacitors fabricated using different processing conditions to extract various types of interfacial charges. An anomalous positive flatband voltage shift with temperature has been observed in most of the SiC MOS capacitors measured. We have experimentally identified an extra type of fixed charges at the 4H-SiC/SiO2 interface from the temperature dependence of the flatband voltage, particularly under UV illumination.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
H. Naik et al., "Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 519-522, 2010