Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

Harsh Naik; Z. Li; T. Paul Chow

doi:10.4028/www.scientific.net/MSF.645-648.519

Paper Titles

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
p.507

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
p.515

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC
p.519

A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
p.523

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
p.527

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy
p.531

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.535

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Experimental Identification of Extra Type of...

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC

Abstract:

High temperature C-V characterization with and without UV illumination has been performed on n-type 4H-SiC MOS capacitors fabricated using different processing conditions to extract various types of interfacial charges. An anomalous positive flatband voltage shift with temperature has been observed in most of the SiC MOS capacitors measured. We have experimentally identified an extra type of fixed charges at the 4H-SiC/SiO2 interface from the temperature dependence of the flatband voltage, particularly under UV illumination.

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Materials Science Forum (Volumes 645-648)

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519-522

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.519

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April 2010

Authors:

Harsh Naik, Z. Li, T. Paul Chow

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C-V Characterization, Interface Charges

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