Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC

Abstract:

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High temperature C-V characterization with and without UV illumination has been performed on n-type 4H-SiC MOS capacitors fabricated using different processing conditions to extract various types of interfacial charges. An anomalous positive flatband voltage shift with temperature has been observed in most of the SiC MOS capacitors measured. We have experimentally identified an extra type of fixed charges at the 4H-SiC/SiO2 interface from the temperature dependence of the flatband voltage, particularly under UV illumination.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

519-522

DOI:

10.4028/www.scientific.net/MSF.645-648.519

Citation:

H. Naik et al., "Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 519-522, 2010

Online since:

April 2010

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Price:

$35.00

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