Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

Dai Okamoto; Hiroshi Yano; Yuki Oshiro; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.645-648.515

Paper Titles

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
p.499

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
p.507

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
p.515

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC
p.519

A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
p.523

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
p.527

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy
p.531

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Investigation of Oxide Films Prepared by Direct...

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide

Abstract:

Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

515-518

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.515

Citation:

Cite this paper

Online since:

April 2010

Authors:

Dai Okamoto, Hiroshi Yano, Yuki Oshiro, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Carbon Face, MOS Interface, Near Interface Traps, Nitridation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Li, S. Dimitrijev, H. B. Harrison et al.: Appl. Phys. Lett. Vol. 70 (1997), p. (2028).

Google Scholar

[2] G. Y. Chung, C. C. Tin, J. R. Williams et al.: Appl. Phys. Lett. Vol. 76 (2000), p.1713.

Google Scholar

[3] V. V. Afanas'ev, A. Stesmans, F. Ciobanu et al.: Appl. Phys. Lett. Vol. 82 (2003), p.568.

Google Scholar

[4] S. Dhar, L. C. Feldman, S. Wang et al.: J. Appl. Phys. Vol. 98 (2005), p.014902.

Google Scholar

[5] T. Kimoto, Y. Kanzaki, M. Noborio et al.: Jpn. J. Appl. Phys. Vol. 44 (2005), p.1213.

Google Scholar

[6] D. Okamoto, H. Yano, Y. Oshiro et al.: Appl. Phys. Express Vol. 2 (2009), p.021201.

Google Scholar

[7] Y. Hijikata, H. Yaguchi, S. Yoshida et al.: J. Vac. Sci. Technol. A Vol. 23 (2005), p.298.

Google Scholar

[8] H. Yano, K. Katafuchi, T. Kimoto et al.: IEEE Trans. Electron Devices Vol. 46 (1999), p.504.

Google Scholar

[9] V. V. Afanas'ev, M. Bassler, G. Pensl et al.: Phys. Status Solidi A Vol. 162 (1997).

Google Scholar