Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Abstract:

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The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

499-502

DOI:

10.4028/www.scientific.net/MSF.645-648.499

Citation:

A. F. Basile et al., "Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States", Materials Science Forum, Vols. 645-648, pp. 499-502, 2010

Online since:

April 2010

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Price:

$35.00

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