Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Alberto F. Basile; John  Rozen; X.D. Chen; Sarit Dhar; John R. Williams; Leonard C. Feldman; Patricia M. Mooney

doi:10.4028/www.scientific.net/MSF.645-648.499

Paper Titles

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
p.487

Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
p.491

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
p.495

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
p.499

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
p.507

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
p.515

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Effect of NO Annealing on 6H- and 4H-SiC MOS...

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

Abstract:

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.