Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

Dai Okamoto; Hiroshi Yano; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.645-648.495

Paper Titles

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface
p.479

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
p.487

Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
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Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
p.495

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
p.499

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
p.507

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Systematic Investigation of Interface Properties...

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates

Abstract:

A change in the interface state density in 4H-SiC metal–oxide–semiconductor (MOS) structures by incorporation of various elements was systematically investigated. B, N, F, Al, P, and Cl ions were implanted prior to the oxidation and introduced at the SiO2/SiC interface by subsequent thermal oxidation. Interface state density near the conduction band edge for Al-, B-, F-, and Cl-implanted MOS capacitors increased with implantation dose. On the other hand, a strong reduction of the interface state density was observed for N- and P-implanted samples when the implantation dose was larger than 5.0 × 1012 cm−2. It was found that the interface state density can be reduced by P as well as N.

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Materials Science Forum (Volumes 645-648)

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495-498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.495

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Online since:

April 2010

Authors:

Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki

Keywords:

Interface State Density (D_it), Ion Implantation, MOS Interface, Over-Oxidation

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