Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs

Abstract:

Article Preview

The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and an increase of the interface state density. Secondary ion mass spectroscopy (SIMS) measurements revealed that the N concentration at the SiO2/SiC interface in preannealed samples is lower than in not-preannealed samples, which might be the reason for in the increase of the interface state density. In MOSFETs without preannealing, more N atoms are piled up at the SiO2/SiC interface, leading to the lower interface state density and higher mobility.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

487-490

DOI:

10.4028/www.scientific.net/MSF.645-648.487

Citation:

Y. Nanen et al., "Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs", Materials Science Forum, Vols. 645-648, pp. 487-490, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.