Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs

Yuichiro Nanen; Bernd Zippelius; Svetlana Beljakowa; Lia Trapaidze; M. Krieger; Tsunenobu Kimoto; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.487

Paper Titles

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469

SiC and GaN MOS Interfaces – Similarities and Differences
p.473

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface
p.479

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
p.487

Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
p.491

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
p.495

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
p.499

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Preannealing Effect on Mobility of...

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs

Abstract:

The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). The preannealing process causes a decrease of the Hall mobility and the effective mobility, and an increase of the interface state density. Secondary ion mass spectroscopy (SIMS) measurements revealed that the N concentration at the SiO2/SiC interface in preannealed samples is lower than in not-preannealed samples, which might be the reason for in the increase of the interface state density. In MOSFETs without preannealing, more N atoms are piled up at the SiO2/SiC interface, leading to the lower interface state density and higher mobility.

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Materials Science Forum (Volumes 645-648)

Pages:

487-490

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.487

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Online since:

April 2010

Authors:

Yuichiro Nanen, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze, M. Krieger, Tsunenobu Kimoto, Gerhard Pensl

Keywords:

Hall Effect, Interface Trap, MOSFET, Over-Oxidation

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