Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

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In this paper the electrical and structural characteristics of n-MOSFETs fabricated on 4H SiC with a process based on nitrogen (N) implantation in the channel region before the growth of the gate oxide are reported for low (5x1018 cm-3) and high (6x1019 cm-3) N concentration at the SiO2/SiC interface. The electron mobility and the free carrier concentration in the MOSFET channel were evaluated by Hall effect measurement. The MOSFETs with the higher N concentration had the best electrical characteristics in terms of threshold voltage and field effect mobility, in spite of a lowering of the electron mobility in the channel. The latter is a negative drawback of the fabrication process that probably can be ascribed to an incomplete recovery of the implantation damage or to a high density of interstitial N atoms present in the channel region. In fact, the MOSFETs with the superior electrical performances were fabricated with the higher N+ dose and the shorter thermal oxidation time. However, no evidence of extended defects, clusters or nano-particles in SiC at the interface with the gate oxide was found in every SiC MOSFETs devices observed by electron transmission microscopy

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

491-494

DOI:

10.4028/www.scientific.net/MSF.645-648.491

Citation:

F. Moscatelli et al., "Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs", Materials Science Forum, Vols. 645-648, pp. 491-494, 2010

Online since:

April 2010

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$35.00

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