Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface

Aveek Chatterjee; Kevin Matocha; Vinayak Tilak; Jody Fronheiser; Hong Piao

doi:10.4028/www.scientific.net/MSF.645-648.479

Paper Titles

Thermal Activation and Cathodoluminescence Measurements of Tb³⁺-Doped a-(SiC)_1-x(AlN)_x Thin Films
p.459

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface
p.463

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469

SiC and GaN MOS Interfaces – Similarities and Differences
p.473

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface
p.479

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
p.487

Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
p.491

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
p.495

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Multiscale Modeling and Analysis of the...

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface

Abstract:

We explain the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC MOSFET. A variety of computational techniques have been used to compute the atomic scale configuration of a nitridated SiC/SiO2 interface, and the corresponding change in Fermi level, inversion channel mobility, and threshold voltage. X-ray photoelectron spectroscopy (XPS) has been used to investigate the SiC/SiO2 interface to determine the nitrogen concentrations and chemical bonding. We elucidate the physics behind improved channel mobility due to NO anneal and demonstrate that the trade-off between threshold voltage and inversion channel mobility can be correlated to the extent of nitridation.