Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface

Abstract:

Article Preview

We explain the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC MOSFET. A variety of computational techniques have been used to compute the atomic scale configuration of a nitridated SiC/SiO2 interface, and the corresponding change in Fermi level, inversion channel mobility, and threshold voltage. X-ray photoelectron spectroscopy (XPS) has been used to investigate the SiC/SiO2 interface to determine the nitrogen concentrations and chemical bonding. We elucidate the physics behind improved channel mobility due to NO anneal and demonstrate that the trade-off between threshold voltage and inversion channel mobility can be correlated to the extent of nitridation.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

479-482

DOI:

10.4028/www.scientific.net/MSF.645-648.479

Citation:

A. Chatterjee et al., "Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface", Materials Science Forum, Vols. 645-648, pp. 479-482, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.