Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface
We explain the role of nitrogen in simultaneously increasing the inversion channel mobility and reducing the threshold voltage of SiC MOSFET. A variety of computational techniques have been used to compute the atomic scale configuration of a nitridated SiC/SiO2 interface, and the corresponding change in Fermi level, inversion channel mobility, and threshold voltage. X-ray photoelectron spectroscopy (XPS) has been used to investigate the SiC/SiO2 interface to determine the nitrogen concentrations and chemical bonding. We elucidate the physics behind improved channel mobility due to NO anneal and demonstrate that the trade-off between threshold voltage and inversion channel mobility can be correlated to the extent of nitridation.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
A. Chatterjee et al., "Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface", Materials Science Forum, Vols. 645-648, pp. 479-482, 2010