Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface

M. Krieger; Svetlana Beljakowa; Bernd Zippelius; Valeri V. Afanas'ev; Anton J. Bauer; Yuichiro Nanen; Tsunenobu Kimoto; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.463

Paper Titles

Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering
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Breakdown of Impurity Al in SiC Polytypes
p.451

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
p.455

Thermal Activation and Cathodoluminescence Measurements of Tb³⁺-Doped a-(SiC)_1-x(AlN)_x Thin Films
p.459

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface
p.463

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469

SiC and GaN MOS Interfaces – Similarities and Differences
p.473

Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface
p.479

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Detection and Electrical Characterization of...

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface

Abstract:

Two electrical measurement techniques are frequently employed for the characteri- zation of traps at the SiO2/SiC interface: the thermal dielectric relaxation current (TDRC) and the conductance method (CM). When plotting Dit as a function of the energy position Eit in the bandgap both techniques reveal comparable results for deep interface traps (EC􀀀Eit > 0:3 eV). For shallower traps, CM always shows a strong increase of Dit which originates from near interface traps (NIT). TDRC provides a contradictory result, namely a slight decrease of Dit. In this paper, we show that the position of NITs in the oxide close to the interface is responsible for the invisibility of these traps in TDRC spectra. We further show that NITs become detectable by the TDRC method by using a discharging voltage Vdis close to the accumulation regime. However, due to the Shockley-Ramo-Theorem the contribution of NITs to the Dit in TDRC spectra is strongly suppressed and can be increased by using thin oxides.

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Materials Science Forum (Volumes 645-648)

Pages:

463-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.463

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Online since:

April 2010

Authors:

M. Krieger, Svetlana Beljakowa, Bernd Zippelius, Valeri V. Afanas'ev, Anton J. Bauer, Yuichiro Nanen, Tsunenobu Kimoto, Gerhard Pensl

Keywords:

Conductance Method, Interface Trap, Near Interface Traps, Thermal Dielectric Relaxation Current

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