Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
G. Alfieri et al., "Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 455-458, 2010