Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Giovanni Alfieri; Tsunenobu Kimoto; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.455

Paper Titles

Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
p.439

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
p.443

Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering
p.447

Breakdown of Impurity Al in SiC Polytypes
p.451

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
p.455

Thermal Activation and Cathodoluminescence Measurements of Tb³⁺-Doped a-(SiC)_1-x(AlN)_x Thin Films
p.459

Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface
p.463

Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469

SiC and GaN MOS Interfaces – Similarities and Differences
p.473

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Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Abstract:

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.