Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

Abstract:

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We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

455-458

DOI:

10.4028/www.scientific.net/MSF.645-648.455

Citation:

G. Alfieri et al., "Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 455-458, 2010

Online since:

April 2010

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Price:

$35.00

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