Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

Abstract:

Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)×1017 cm-3) and nitrogen concentration (4×1016 cm-3) in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient Da (~2.5 cm2/s) and carrier lifetime τR (2-4 ns) values at room temperature. The temperature dependences of Da and τR in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects.

• Periodical: Materials Science Forum (Volumes 645-648)
• Pages: 443-446
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.645-648.443
• Online since: April 2010
• Authors: Georgios Manolis, Georgios Zoulis, Sandrine Juillaguet, Jean Lorenzzi, Gabriel Ferro, Jean Camassel, Kęstutis Jarašiūnas
• Keywords: Bipolar Mobility, Carrier Lifetime, Diffusion Coefficient, Photoluminescence (PL)

References

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[40] 60 80 100 200 400.

[1] [2] [3] [4] [5] 10 mJ/cm2 VLS-50 VLS-86 SG-125.

[1] mJ/cm2 VLS-50 VLS-86 SG-125 Lifetime (ns) Temperature (K) (a).

[40] 60 80 100 200 400.

[20] [40] [60] [80] 100 200 400 µα∼Τ -3/2 VLS50 VLS86 Bipolar mobility (cm2/Vs) Temperature (K) µα∼Τ 3/2 (b).

[1] mJ/cm2 Fig. 4. Temperature dependences of carrier lifetime at two excitation intensities, I= 1 1mJ/cm.

[2] and 10 mJ/cm.

[2] (a) and of ambipolar carrier mobility at I=1mJ/cm.

[2] (b), determined by transient grating technique.