Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)×1017 cm-3) and nitrogen concentration (4×1016 cm-3) in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient Da (~2.5 cm2/s) and carrier lifetime τR (2-4 ns) values at room temperature. The temperature dependences of Da and τR in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
G. Manolis et al., "Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques", Materials Science Forum, Vols. 645-648, pp. 443-446, 2010