Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

Abstract:

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Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)×1017 cm-3) and nitrogen concentration (4×1016 cm-3) in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient Da (~2.5 cm2/s) and carrier lifetime τR (2-4 ns) values at room temperature. The temperature dependences of Da and τR in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

443-446

DOI:

10.4028/www.scientific.net/MSF.645-648.443

Citation:

G. Manolis et al., "Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques", Materials Science Forum, Vols. 645-648, pp. 443-446, 2010

Online since:

April 2010

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$35.00

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