Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

Abstract:

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Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

427-430

DOI:

10.4028/www.scientific.net/MSF.645-648.427

Citation:

S. Beljakowa et al., "Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers", Materials Science Forum, Vols. 645-648, pp. 427-430, 2010

Online since:

April 2010

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$35.00

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