Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Fei Yan; Robert P. Devaty; Wolfgang J. Choyke; Katsunori Danno; Giovanni Alfieri; Tsunenobu Kimoto; Shinobu Onoda; Takeshi Ohshima; Sergey A. Reshanov; Svetlana Beljakowa; Bernd Zippelius; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.419

Paper Titles

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
p.403

The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
p.407

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
p.411

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
p.415

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
p.431

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
p.435

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Thermal Histories of Defect Centers as Measured by...

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Abstract:

In this paper we describe an effort to find correlations between low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS) of electron irradiated samples annealed from 25 °C to 1700 °C in 100 °C steps. We report on thermal histories of defect centers created by 170 keV and 1 MeV electron irradiation, as observed by LTPL only. The DLTS results on "twin" samples are presented in a separate paper. Our results indicate that in n-type 4H SiC there is no correlation between the Z1/Z2 center in DLTS and the L1 peak of the DI center seen in LTPL. In p-type 4H SiC we do not find a correlation between a 350 meV DLTS peak above the valence band and the LTPL L1 peak of the DI center. Consequently, we cannot find evidence for a 350 meV ground state postulated in the “Pseudo–Donor” model [3].

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Materials Science Forum (Volumes 645-648)

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419-422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.419

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Online since:

April 2010

Authors:

Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Katsunori Danno, Giovanni Alfieri, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Sergey A. Reshanov, Svetlana Beljakowa, Bernd Zippelius, Gerhard Pensl

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Deep Level, Photoluminescence (PL), Pseudo-Donor Model

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References

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