Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. A. Reshanov et al., "Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons", Materials Science Forum, Vols. 645-648, pp. 423-426, 2010