The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation

Abstract:

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Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples studied subsequently by low temperature photoluminescence microscopy. The results were found to depend on the electron energy, the n(N)- or p(Al)-doping and the C- or Si-face irradiated. The implications of these results for the current understanding of the atomic origins of these lines are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

407-410

DOI:

10.4028/www.scientific.net/MSF.645-648.407

Citation:

J. W. Steeds "The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation", Materials Science Forum, Vols. 645-648, pp. 407-410, 2010

Online since:

April 2010

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$35.00

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