The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples studied subsequently by low temperature photoluminescence microscopy. The results were found to depend on the electron energy, the n(N)- or p(Al)-doping and the C- or Si-face irradiated. The implications of these results for the current understanding of the atomic origins of these lines are discussed.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. W. Steeds "The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation", Materials Science Forum, Vols. 645-648, pp. 407-410, 2010