The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation

John W. Steeds

doi:10.4028/www.scientific.net/MSF.645-648.407

Paper Titles

Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
p.391

Theory of Neutral Divacancy in SiC: A Defect for Spintronics
p.395

The Carbon Vacancy Related EI4 Defect in 4H-SiC
p.399

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
p.403

The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation
p.407

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
p.411

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates
p.415

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

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The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation

Abstract:

Low voltage electron irradiations with electron energies down to the C-displacement threshold have been performed and the irradiated samples studied subsequently by low temperature photoluminescence microscopy. The results were found to depend on the electron energy, the n(N)- or p(Al)-doping and the C- or Si-face irradiated. The implications of these results for the current understanding of the atomic origins of these lines are discussed.