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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Fine Structure of Triplet Centers in Room...

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC

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Abstract:

In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.

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Silicon Carbide and Related Materials 2009

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

403-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.403

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Online since:

April 2010

Authors:

Andreas Scholle, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, Uwe Gerstmann

Keywords:

Electron Irradiation, Electron Paramagnetic Resonance (EPR), Vacancy

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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