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Paper Titles
The Carbon Vacancy Related EI4 Defect in 4H-SiC
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Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC
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Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
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Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
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Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers
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LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

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Abstract:

Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature photoluminescence (LTPL) measurements. On these Ga-doped samples, all experimental spectra collected at 5K were found dominated by strong N-Ga donor-acceptor pair (DAP) transitions and phonon replicas. As expected, the N-Ga DAP zero-phonon line (ZPL) was located at lower energy (~ 86 meV) below the N-Al one. Fitting the transition energies for the N-Al close DAP lines gave 251 meV for the Al acceptor binding energy in 3C-SiC and, by comparison, 337 meV for the Ga acceptor one.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

415-418

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.415

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Online since:

April 2010

Authors:

Jian Wu Sun, Georgios Zoulis, Jean Lorenzzi, Nikoletta Jegenyes, Sandrine Juillaguet, Hervé Peyre, Véronique Soulière, Gabriel Ferro, Frédéric Milesi, Jean Camassel

Keywords:

Donor-Acceptor Pair, Photoluminescence (PL)

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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