A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation

Abstract:

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4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced intrinsic point defects. It is found that the defects migrate on the order of hundreds of μm laterally and carbon interstitials (CI) are believed to be involved in the defect formation. However, the vertical diffusion lengths are revealed to be several orders of magnitude shorter, on the order of hundreds of nm. Specifically, the Z1,2, S1,2 and EH6,7 levels are found to be generated significant distances from the irradiated area, suggesting that CI or another highly mobile species are involved in the formation of these defects.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

431-434

DOI:

10.4028/www.scientific.net/MSF.645-648.431

Citation:

L. S. Løvlie et al., "A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation", Materials Science Forum, Vols. 645-648, pp. 431-434, 2010

Online since:

April 2010

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$35.00

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