Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC

Franziska Christine Beyer; Carl G. Hemmingsson; Henrik Pedersen; Anne Henry; Junichi Isoya; Norio Morishita; Takeshi Ohshima; Erik Janzén

doi:10.4028/www.scientific.net/MSF.645-648.435

Paper Titles

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
p.419

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
p.431

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
p.435

Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
p.439

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
p.443

Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering
p.447

Breakdown of Impurity Al in SiC Polytypes
p.451

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Metastable Defects in Low-Energy Electron...

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC

Abstract:

After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DLTS peak amplitudes of the defects Z1/2 and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, EH1 and EH3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (<220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

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Materials Science Forum (Volumes 645-648)

Pages:

435-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.435

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Online since:

April 2010

Authors:

Franziska Christine Beyer, Carl G. Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzén

Keywords:

Bistability, Deep Level Transient Spectroscopy, Electron Irradiation, Metastable Defect

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References

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