Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC

Abstract:

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After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DLTS peak amplitudes of the defects Z1/2 and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, EH1 and EH3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (<220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

435-438

DOI:

10.4028/www.scientific.net/MSF.645-648.435

Citation:

F. C. Beyer et al., "Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 435-438, 2010

Online since:

April 2010

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$35.00

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