Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons

Michael Weidner; Lia Trapaidze; Gerhard Pensl; Sergey A. Reshanov; Adolf Schöner; Hisayoshi Itoh; Takeshi Ohshima; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.645-648.439

Paper Titles

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
p.423

Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
p.427

A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
p.431

Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
p.435

Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
p.439

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques
p.443

Elastic Waves in Nano-Columnar Porous 4H-SiC Measured by Brillouin Scattering
p.447

Breakdown of Impurity Al in SiC Polytypes
p.451

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
p.455

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Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons

Abstract:

Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.