Paper Title:
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
  Abstract

Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.645-648.469
Citation
M. J. Tadjer, K. D. Hobart, R. E. Stahlbush, P. J. McMarr, H. L. Hughes, F. J. Kub, S. K. Haney, "Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation", Materials Science Forum, Vols. 645-648, pp. 469-472, 2010
Online since
April 2010
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Price
$35.00
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Abstract:The existence of a turnaround in flat-band voltage shift of stressed MOS capacitors, fabricated on N-type 4H–SiC substrates, is reported in...
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