Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

Marko J. Tadjer; Karl D. Hobart; Robert E. Stahlbush; Patrick J. McMarr; Hap L. Hughes; Fritz J. Kub; Sarah K. Haney

doi:10.4028/www.scientific.net/MSF.645-648.469

Paper Titles

Breakdown of Impurity Al in SiC Polytypes
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Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
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Thermal Activation and Cathodoluminescence Measurements of Tb³⁺-Doped a-(SiC)_1-x(AlN)_x Thin Films
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Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface
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Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469

SiC and GaN MOS Interfaces – Similarities and Differences
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Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO₂ Interface
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Dynamical Simulations of Dry Oxidation and NO Annealing of SiO₂/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483

Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
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Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

Abstract:

Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

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Materials Science Forum (Volumes 645-648)

Pages:

469-472

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.469

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Online since:

April 2010

Authors:

Marko J. Tadjer, Karl D. Hobart, Robert E. Stahlbush, Patrick J. McMarr, Hap L. Hughes, Fritz J. Kub, Sarah K. Haney

Keywords:

Hole Trap, MOS Capacitor, Thermally Stimulated Current

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