Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

Abstract:

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Thermally stimulated current (TSC) measurements on epitaxial and implanted 4H-SiC MOS capacitors are presented. The effect of gamma ray irradiation on the TSC spectra of epitaxial 4H-SiC MOSCAP devices is discussed. On non-irradiated samples, two TSC peaks are observed near 55 K and 80 K. Due to the generated oxide charge during irradiation, the 80 K emission split into two constituent peaks. These have been attributed to hole traps and Al acceptors.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

469-472

DOI:

10.4028/www.scientific.net/MSF.645-648.469

Citation:

M. J. Tadjer et al., "Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation", Materials Science Forum, Vols. 645-648, pp. 469-472, 2010

Online since:

April 2010

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$35.00

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