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Paper Titles
Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC
p.455
Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films
p.459
Detection and Electrical Characterization of Defects at the SiO2/4H-SiC Interface
p.463
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
p.469
SiC and GaN MOS Interfaces – Similarities and Differences
p.473
Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface
p.479
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO2/4H-SiC Interface on C-Face at 1500K: From First Principles
p.483
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
p.487
Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
p.491

SiC and GaN MOS Interfaces – Similarities and Differences

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Abstract:

We have comparatively characterized the electrical characteristics of 4H-SiC and 2H-GaN MOS capacitors and FETs. While progressive refinement of gate oxide processes, notably with NO anneal, has resulted in better threshold voltage control, reduced subthreshold slope and higher field-effect mobility for 4H-SiC MOSFETs, we have recently reported more superior MOS parameters for 2H-GaN MOSFETs. In addition, we have performed MOS-gated Hall measurements to extract the intrinsic carrier concentration and MOS mobility, indicating that both less channel electron trapping and scattering take place in 2H-GaN MOSFETs.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

473-478

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.473

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Online since:

April 2010

Authors:

T. Paul Chow

Keywords:

Field Effect Mobility, High Resolution Transmission Electron Microscopy, Interface State Density (Dit), Threshold Voltage

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