Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration

Abstract:

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We have investigated NH3 plasma pretreatment for Si- and C-face 4H-SiC and characterized interface properties and bond configuration. It is revealed that the NH3 plasma pretreatment is effective to reduce interface state density on C-face. From X-ray photoelectron spectroscopy (XPS) measurements, N- and H-related C bonds were observed. N and H passivate C-related defects and dangling bonds, resulting in improved interface properties.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

503-506

DOI:

10.4028/www.scientific.net/MSF.645-648.503

Citation:

Y. Iwasaki et al., "Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration", Materials Science Forum, Vols. 645-648, pp. 503-506, 2010

Online since:

April 2010

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$35.00

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