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Paper Titles
Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
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Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
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Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
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Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
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Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
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Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
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Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
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Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
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Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC
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Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration

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Abstract:

We have investigated NH3 plasma pretreatment for Si- and C-face 4H-SiC and characterized interface properties and bond configuration. It is revealed that the NH3 plasma pretreatment is effective to reduce interface state density on C-face. From X-ray photoelectron spectroscopy (XPS) measurements, N- and H-related C bonds were observed. N and H passivate C-related defects and dangling bonds, resulting in improved interface properties.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

503-506

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.503

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Online since:

April 2010

Authors:

Yoshinori Iwasaki, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

MOS Capacitor, Nitridation, X-Ray Photospectroscopy

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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