Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
We have investigated the electrical and physical properties of the oxidized-SiN with or without post oxidation annealing (POA) in N2 gas. A significant reduction in interface-trap density (Dit) has been observed in the oxidized-SiN with N2 POA for 60 min if compared with other oxides. The reason for this has been explained in this paper.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. H. Moon et al., "Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide", Materials Science Forum, Vols. 645-648, pp. 511-514, 2010