Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide

Abstract:

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We have investigated the electrical and physical properties of the oxidized-SiN with or without post oxidation annealing (POA) in N2 gas. A significant reduction in interface-trap density (Dit) has been observed in the oxidized-SiN with N2 POA for 60 min if compared with other oxides. The reason for this has been explained in this paper.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

511-514

DOI:

10.4028/www.scientific.net/MSF.645-648.511

Citation:

J. H. Moon et al., "Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide", Materials Science Forum, Vols. 645-648, pp. 511-514, 2010

Online since:

April 2010

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$35.00

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