Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide

Jeong Hyun Moon; Jeong Hyuk Yim; Han Seok Seo; Chang Hyun Kim; Do Hyun Lee; Kuan Yew Cheong; Wook Bahng; Nam Kyun Kim; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.645-648.511

Paper Titles

Systematic Investigation of Interface Properties in 4H-SiC MOS Structures Prepared by Over-Oxidation of Ion-Implanted Substrates
p.495

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
p.499

Significant Decrease of the Interface State Density by NH₃ Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
p.503

Improved Electrical Properties of SiC-MOS Interfaces by Thermal Oxidation of Plasma Nitrided 4H-SiC(0001) Surfaces
p.507

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
p.515

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC
p.519

A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
p.523

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
p.527

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Improved 4H-SiC MOS Interface Produced by...

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide

Abstract:

We have investigated the electrical and physical properties of the oxidized-SiN with or without post oxidation annealing (POA) in N2 gas. A significant reduction in interface-trap density (Dit) has been observed in the oxidized-SiN with N2 POA for 60 min if compared with other oxides. The reason for this has been explained in this paper.

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Materials Science Forum (Volumes 645-648)

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511-514

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.511

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Online since:

April 2010

Authors:

Jeong Hyun Moon, Jeong Hyuk Yim, Han Seok Seo, Chang Hyun Kim, Do Hyun Lee, Kuan Yew Cheong, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim

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MOS Interface

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