EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Abstract:

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We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

527-530

DOI:

10.4028/www.scientific.net/MSF.645-648.527

Citation:

C. J. Cochrane et al., "EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors", Materials Science Forum, Vols. 645-648, pp. 527-530, 2010

Online since:

April 2010

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Price:

$35.00

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