EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Corey J. Cochrane; Brad C. Bittel; Patrick M. Lenahan; Jody Fronheiser; Kevin Matocha; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.645-648.527

Paper Titles

Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
p.511

Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide
p.515

Experimental Identification of Extra Type of Charges at SiO₂/SiC Interface in 4H-SiC
p.519

A C-V Method of Slow-Switching Interface Traps Identification in Silicon Carbide MOS Structures
p.523

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
p.527

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy
p.531

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.535

Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics
p.539

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
p.543

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648EDMR and EPR Studies of 4H SiC MOSFETs and...

EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors

Abstract:

We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.