EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
C. J. Cochrane et al., "EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors", Materials Science Forum, Vols. 645-648, pp. 527-530, 2010