Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy

Abstract:

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Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

551-554

DOI:

10.4028/www.scientific.net/MSF.645-648.551

Citation:

M. Yamaguchi et al., "Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy", Materials Science Forum, Vols. 645-648, pp. 551-554, 2010

Online since:

April 2010

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Price:

$35.00

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