Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera

Kun Yong Lee; Hisashi Miyazaki; Yoichi  Okamoto; Jun Morimoto

doi:10.4028/www.scientific.net/MSF.645-648.559

Paper Titles

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
p.543

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
p.547

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
p.551

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
p.555

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
p.559

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
p.565

Growth Rate and Thickness Uniformity of Epitaxial Graphene
p.569

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
p.573

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
p.577

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of Defects in Semi-Insulating...

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera

Abstract:

We have detected defects micro-pipes and a cluster of impurities in semi-insulating 6H-SiC substrates using long-wavelength infrared thermal imaging camera (IR-camera) with 8 ~ 14 µm in non-destructive and non-contact. Also we have evaluated the thermal influence of defects on the entire substrates from the observation results of scanning laser microscope (SLM) and light scattering tomography (LST). Through the process, it was certificated that the defects in the substrates could be detected with relatively macroscopic scale (8  6 mm2). Moreover, through a temperature profile processing by a 0.1 K thermal resolution, we estimated thermal behavior of the defect areas in the 6H-SiC precisely. The IR-camera is considered as effective technique for evaluating the defects in the intermediate range between micro and macro scale.