Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency

Dmitry Kazantsev

doi:10.4028/www.scientific.net/MSF.645-648.547

Paper Titles

Electrical Properties and Gas Sensing Characteristics of the Al₂O₃/4H SiC Interface Studied by Impedance Spectroscopy
p.531

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.535

Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics
p.539

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
p.543

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
p.547

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
p.551

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
p.555

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
p.559

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
p.565

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Modal Composition of the SiC Surface...

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency

Abstract:

To observe the direction of the surface polariton wave excited by the external radiation on the semi-infinite crystal surface, the opaque mask was placed onto the sample surface. The penetration of the surface polariton wave from the open surface in beneath the metal mask was observed via small openings in the mask. It was shown that despite the k-vector mismatch between the surface polariton states and the light in the environmental media (vacuum), non-zero efficiency of the surface wave excitation is still present and that the k-vector of the excited wave corresponds to the k-vector projection of the driving light.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

547-550

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.547

Citation:

Cite this paper

Online since:

April 2010

Authors:

Dmitry Kazantsev

Keywords:

Phonon Polariton

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G. Spitzer, D. Kleinman, and D. Walsh. Phys. Rev. Vol. 113 (1959), p.127.

Google Scholar

[2] .H. Lyddane, R.G. Sachs, E. Teller. Phys. Rev., Vol. 59 (1941), p.673.

Google Scholar

[3] R. Ruppin, R. Englman. Rep. Prog. Phys. Vol. 33 (1970) p.149.

Google Scholar

[4] Y. Sasaki, Y. Nishina, M. Sato and K. Okamura. Phys. Rev. B Vol. 40 (1989), p.1762.

Google Scholar

[5] Physics of Group IV Elements and III-V Compounds, edited by K. -H. Hellwege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a, Springer, Berlin, (1982).

DOI: 10.1007/b71128

Google Scholar

[6] B. Adolph, K. Tenelsen, V. I. Gavrilenko, and F. Bechstedt. Phys. Rev. B, Vol. 55 (1997), p.1422.

Google Scholar

[7] F. Zenhausern, M.P. O´Boyle, and H.K. Wickramasinghe, App. Phys. Lett., Vol. 65 (1994), p.1623.

Google Scholar

[8] A. Huber et al. Appl. Phys. Lett. Vol. 87 (2005), p.081103.

Google Scholar

[9] D.V. Kazantsev, JETP Lett., Vol. 83 (2006), p.323.

Google Scholar

[10] M.A. Ordal, et al. Appl. Opt. Vol. 24 (1985), p.4493.

Google Scholar