Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

Rositza Yakimova; Chariya Virojanadara; Daniela Gogova; Mikael Syväjärvi; D. Siche; Karin Larsson; Leif I. Johansson

doi:10.4028/www.scientific.net/MSF.645-648.565

Paper Titles

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
p.547

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
p.551

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
p.555

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
p.559

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
p.565

Growth Rate and Thickness Uniformity of Epitaxial Graphene
p.569

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
p.573

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
p.577

Differences between Graphene Grown on Si-Face and C-Face
p.581

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Analysis of the Formation Conditions for Large...

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

Abstract:

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

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Materials Science Forum (Volumes 645-648)

Pages:

565-568

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.565

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Online since:

April 2010

Authors:

Rositza Yakimova, Chariya Virojanadara, Daniela Gogova, Mikael Syväjärvi, D. Siche, Karin Larsson, Leif I. Johansson

Keywords:

Angular Resolved Photo Electron Spectroscopy (ARPES), Low Energy Electron Microscopy

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