Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

Abstract:

Article Preview

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

565-568

DOI:

10.4028/www.scientific.net/MSF.645-648.565

Citation:

R. Yakimova et al., "Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 565-568, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.