Differences between Graphene Grown on Si-Face and C-Face

Nicolas Camara; Alessandra Caboni; Jean Roch Huntzinger; Antoine Tiberj; Narcis Mestres; Philippe Godignon; Jean Camassel

doi:10.4028/www.scientific.net/MSF.645-648.581

Paper Titles

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
p.565

Growth Rate and Thickness Uniformity of Epitaxial Graphene
p.569

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
p.573

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
p.577

Differences between Graphene Grown on Si-Face and C-Face
p.581

Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
p.585

Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
p.589

Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation
p.593

Epitaxial Graphene Growth Studied by Low-Energy Electron Microscopy and First-Principles
p.597

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Differences between Graphene Grown on Si-Face and...

Differences between Graphene Grown on Si-Face and C-Face

Abstract:

Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth.

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Materials Science Forum (Volumes 645-648)

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581-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.581

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Online since:

April 2010

Authors:

Nicolas Camara, Alessandra Caboni, Jean Roch Huntzinger, Antoine Tiberj, Narcis Mestres, Philippe Godignon, Jean Camassel

Keywords:

Epitaxial Graphene, Raman Spectroscopy

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