Differences between Graphene Grown on Si-Face and C-Face

Abstract:

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Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

581-584

DOI:

10.4028/www.scientific.net/MSF.645-648.581

Citation:

N. Camara et al., "Differences between Graphene Grown on Si-Face and C-Face", Materials Science Forum, Vols. 645-648, pp. 581-584, 2010

Online since:

April 2010

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Price:

$35.00

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