Differences between Graphene Grown on Si-Face and C-Face
Epitaxial graphene growth is significantly different depending on the polarity of the 6H-SiC surface: Si- or C-face. On the Si-face, a uniform coverage of few layers on the whole sample can be obtained, but with electrical properties disturbed by the presence of a Carbon-rich buffer layer at the interface. On the contrary, on the C-face, we demonstrated that almost free-standing very large monolayers of graphene can be obtained by covering the sample with a graphitic cap during the growth.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
N. Camara et al., "Differences between Graphene Grown on Si-Face and C-Face", Materials Science Forum, Vols. 645-648, pp. 581-584, 2010