Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies

Abstract:

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Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are presented. The high-resolution TEM (HRTEM) revealed distinctive distance differences between the first carbon graphene layer and SiC surface for both polarities. The prolonged annealing of SiC with carbon face shows, that in addition to the increase of number of graphene layers, there is also observed splitting between stack of graphene layers and the surface of SiC substrate. In addition, the density of so called “puckers” increases.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

577-580

DOI:

10.4028/www.scientific.net/MSF.645-648.577

Citation:

J. Borysiuk et al., "Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies", Materials Science Forum, Vols. 645-648, pp. 577-580, 2010

Online since:

April 2010

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$35.00

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