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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Graphene Growth on C and Si-Face of 4H-SiC – TEM...

Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies

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Abstract:

Transmission Electron Microscopy (TEM) investigations of graphene layers synthesized on Si and C-terminated on-axis oriented 4H-SiC are presented. The high-resolution TEM (HRTEM) revealed distinctive distance differences between the first carbon graphene layer and SiC surface for both polarities. The prolonged annealing of SiC with carbon face shows, that in addition to the increase of number of graphene layers, there is also observed splitting between stack of graphene layers and the surface of SiC substrate. In addition, the density of so called “puckers” increases.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

577-580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.577

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Online since:

April 2010

Authors:

Jolanta Borysiuk, Rafał Bożek, Wlodek Strupiński, Jacek M. Baranowski

Keywords:

Atomic Force Microscope (AFM), Epitaxial Growth, Graphen, TEM

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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[1] A.H.C. Neto, F. Guinea, N. Peres, K. Novoselov and A. Geim: Rev. Mod. Phys. Vol. 81 (2009), p.109.

[2] K. S. Novoselov et al.: Science Vol. 306 (2004), p.666.

[3] C. Berger et al.: J. Phys. Chem. B Vol. 108 (2004), p.19912.

[4] A. Drabinska, J. Borysiuk, W. Strupinski and J.M. Baranowski: submitted to Mater. Sci. Forum (2009).

[5] J. Hass et al.: Appl. Phys. Lett. Vol. 89 (2006), p.143106.

[6] M. Orlita et al.: Phys. Rev. Lett. Vol. 101 (2008), p.267601.

[7] J. Haas et al.: Phys. Rev. Lett. Vol. 100 (2008), p.125504.

[8] J. Borysiuk et al., J. Appl. Phys. Vol. 105 (2009), p.023503.

[9] A. Mattausch and O. Pankratov: Phys. Rev. Lett. Vol. 99 (2007), p.076802.

[10] F. Varchon et al.: Phys. Rev. Lett. Vol. 99 (2007), p.126805.

[11] S. Kim, J. Him, H. J. Choi and Y. -W. Son: Phys. Rev. Lett. Vol. 100 (2008), p.176802.

[12] I. Forbeaux, J. M. Themlin and J. M. Debever: Phys. Rev. B Vol. 58 (1998), p.16396.

[13] C. Riedl, U. Starke, J. Bernhardt, M. Franke and K. Heinz: Phys. Rev. B Vol. 76 (2007), p.245406.

[14] P. Lauffer et al.: Phys. Rev. B Vol. 77 (2008), p.155426.

[15] K. V. Emtsev, F. Speck, T. Seyller, L. Ley and J. D. Riley: Phys. Rev. B Vol. 77 (2008), p.155303.

[16] W. Chen et al.: Surface Science Vol. 596 (2005), p.176.

[17] W. J. Ong and E. S. Tok: Phys. Rev. B Vol. 73 (2006), p.045330.

[18] G. M. Rutter et al.: Phys. Rev. B Vol. 76 (2007), p.235416.