Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure

John Boeckl; W.C. Mitchel; Edwina Clarke; Roland L. Barbosa; Wei Jie Lu

doi:10.4028/www.scientific.net/MSF.645-648.573

Paper Titles

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
p.555

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
p.559

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
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Growth Rate and Thickness Uniformity of Epitaxial Graphene
p.569

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
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Graphene Growth on C and Si-Face of 4H-SiC – TEM and AFM Studies
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Differences between Graphene Grown on Si-Face and C-Face
p.581

Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers
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Growth of Few Layers Graphene on Silicon Carbide from Nickel Silicide Supersaturated with Carbon
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Structural Evaluation of Graphene/SiC (0001) Grown...

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure

Abstract:

Graphene growth on SiC in atmospheric pressure argon exhibits large terrace sizes and coverage over the entire substrate surface. Graphene growth and the resulting morphology are correlated with the characteristics of the growth chamber and the surface quality of the starting SiC substrate. Without in-situ surface preparation prior to growth, we observe “wrinkles” in the graphene surface. Graphitic-like disordered structures are formed at 1500°C while atomically flat graphene terraces are formed above 1600°C.

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Materials Science Forum (Volumes 645-648)

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573-576

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.573

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April 2010

Authors:

John Boeckl, W.C. Mitchel, Edwina Clarke, Roland L. Barbosa, Wei Jie Lu

Keywords:

Epitaxial Growth, Graphen

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References

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