Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure
Graphene growth on SiC in atmospheric pressure argon exhibits large terrace sizes and coverage over the entire substrate surface. Graphene growth and the resulting morphology are correlated with the characteristics of the growth chamber and the surface quality of the starting SiC substrate. Without in-situ surface preparation prior to growth, we observe “wrinkles” in the graphene surface. Graphitic-like disordered structures are formed at 1500°C while atomically flat graphene terraces are formed above 1600°C.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. Boeckl et al., "Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure ", Materials Science Forum, Vols. 645-648, pp. 573-576, 2010