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The XRD diffraction patterns show that the phase of CoMn2O4 was spinel (JCPDS no.77-0471).
In this present study we have chosen x=0.4 because magnetic moment decreased as the concentration of increased to x=0.5 due to lattice perfection which is caused by increased number of Zn ions on the A site, as result of according as interaction increases with spin of B site by magnetic moment of A site is weak, magnetic moment is decreased that semi-balance ingredient is grown [20].
The observed diffraction peaks correspond to the standard patterns of CoMn2O4 spinel structure (JCPDS Card No. 77-0471).

All diffraction peaks of XRD patterns of doped samples were basically identical with ceria standard atlas of JCPDS card 34-0394 card, thus the structure of doped samples belonged to cubic fluorite structure.
Furthermore, because of the holding time was not long enough, the samples did not sinter well, which resulted in the increase of the number of pores.

The nano-sized ZnO particles are of a hexagonal structure and all the diffraction peaks can be well indexed to the hexagonal phase ZnO reported in JCPDS card (No. 36-1451, a = 0.3249 nm, c = 0.5206 nm).
Sample I show that the surface morphology was observed the number particle with small number rod like structure is obtained (Fig.4a).Sample II show that agglomeration of particle and some small rod is obtained (Fig.4b).
Fig. 4c & d show that the TEM image of chitosan-ZnO nanocomposites are observed rod like and more number of particles are noted.

The diffraction peaks at 2θ with 26.2◦, 31.0◦, 32.6◦, 35.6◦, 39.9◦, 44.7◦, 50.3◦ and 53.8◦ corresponds to the (111), (200), (100), (121), (102), (202), (203) and (123), planes of Cu(OH)2.H2O (JCPDS Card No. 42-0638), respectively.
When annealing at different temperatures (200°C to 600 °C) the peaks at 2θ with 32.6◦, 35.8◦, 39.0◦, 49.0◦, 53.6◦, 58.5◦, 61.7◦, 66.1◦, 68.1◦, 72.5◦ and 75.2◦ corresponds to the (110), (-111), (200), (202), (020), (202), (-113), (-311), (220), (311) and (-222) planes of CuO (JCPDS Card No. 05.0661) correspondingly.
In addition, the number of reflection increases with increasing the calcination temperature.
Transmittance (T%) a Wave number (cm-1) Transmittance (T%) b Wave number (cm-1) Transmittance (T%) c Wave number (cm-1) Transmittance (T%) d Wave number (cm-1) Figure 6: FT-IR spectra of CuONPs at temperatures (a) 100 ◦C, (b) 200 ◦C, (c) 400 ◦C, and (d) 600 ◦C.

However, the samples deposited above 120 w as well as annealed sample were of polycrystalline structure, exhibiting quite strong diffraction peaks indexed to (110), (101) and (211) crystalline planes, respectively, which are consistent with the typical diffraction peaks of stoichiometric SnO2 (JCPDS card no. 41-1445).
From this table, it can be seen that, the calculated a and c values of the obtained films were both smaller than those of stoichiometric SnO2 (a=b=4.738 Å, c=3.187 Å, JCPDS card no. 41-1445); but they would become closer to those of stoichiometric SnO2with increasing sputtering power, indicating that, there existed a lattice shrinkage in the films, which might be caused by defects in them, and the number of defects would decrease with increasing sputtering power.
Thus, the number of Sn and O atoms arriving at the substrate increased gradually with increasing sputtering power, which would increase the probability of inter-atomic collisions, finally leading to increasing grain size in the films.
During magnetron sputtering, the number of Sn and O atoms arriving at substrate increased with increasing sputtering power during the same time, resulting in a faster deposition growth for the corresponding films.
In particular, the annealed sample exhibited highest electrical resistivity (about 4.17×107Ω·cm) than all the as-deposited films samples owing to the least number of VO in such film.

The cubic structure of Y2O3 NPs is confirmed by XRD examination, which also corresponds to JCPDS card No. 083-0927.
At elevated temperatures, smaller particles merge to form larger grains, which reduces the overall surface area due to a decrease in the number of fine particles.
The peaks are indexed to the cubic phase of Y₂O₃, as per the JCPDS Card No. 083-0927 [21, 36].
As the sintering temperature increases, improved crystallinity and grain growth reduce the number of defect states and lattice distortions, resulting in a widening of the bandgap [50-53].
XRD analysis confirms the formation of a cubic structure, in agreement with JCPDS card No. 083-0927.

The XRD patterns of the samples with 30 min milling time and above shows the characteristic peaks (three intense peaks at 31.77°, 32.18°, 32.90°), similar to the JCPDS HA.
The XRD patterns of the annealed samples are compared with the TCP (JCPDS No. 09-0169) peaks to find out the thermal stability of the synthesized HA samples.
XRD peaks of HA(JCPDS No. 09-432) and XRD patterns of the as-synthesized samples HA-10min, HA-20min, HA-30min and HA-2h Fig. 2.
These peaks are exactly matching with that of TCP peaks corresponding to the JCPDS card No. 09-0169.
Also, the number of dislocations introduced increases, causing an increase in the lattice strain.

Fig. 1 a showed that the products calcined at 700 oC presented the characterization XRD peaks of CaCO3 and CaO, which can be indexed to the JCPDS card no. 01-072-1937 and 00-037-1497, and the peaks corresponding to CaCO3 were lower than those of CaO.
Fig. 2 b showed the XRD patterns of the products obtained at 800 oC merely expressed the peaks of CaO (JCPDS card no. 00-037-1497).
The surface is very rough and consists of a great number of small CaCO3 nanoparticles.
It was probably because that higher temperature would result in the vaporization of methanol and form a large number of bubbles, which decreased the reaction rate of biodiesel production and made the reaction equilibrium move back.
The faster rate could be obtained upon addition of more catalyst due to the increase in the total number of available active catalytic sites for the reaction.

The spectroscopic properties of RuDPC complex is seemed to be dependent on its characteristics to the effect of radiation (FTIR), as a solar material in the application of this field; due to DPC is a photosensitive material, so that there are a number of optical applications which depend upon optically induced structure transition energy states for the complex.
Ruthenium (Ru) is one of the chemical elements, it has atomic number of 44 and its electronic configuration is [Kr] 4d7 5s1.
The XRD peaks of DPC is well matched with JCPDS file of DPC (JCPDS card No.00-005-0323) [31] and XRD peaks of ruthenium metal is well suited with JCPDS file of Ru (JCPDS card No.01-071-4656) [32].To understand the effect of Ru content in DPC matrix on crystallization, the DPC were analyzed by X-ray.
The rate change in the FTIR spectroscopic analysis through the formation of new complex (RuDPC), such as (band shape, transmittance, rotational energy barrier, relaxation time,…) is mainly related to the number of ions that tolerate different energy states.
That is supported the basic spectroscopic properties of the new complex (RuDPC) is seemed to be based on its characteristic to the effect of radiation (FTIR), as a solar material in the application of this field, due to DPC is a photosensitive material, and the formation of the delocalized energy state in the new complex (RuDPC), so that there are a number of optical applications which depend upon optically induced structure transition energy states for the (RuDPC) complex.

The MgO (periclase) polycrystalline thin film consisted of a single-phase cubic system agree to employ JCPDS database card No. (45-0946), agree with [23].
Hence the modified thin films with Se shows present of the Magnesium selenate phase MgSeO4 addendum to the periclase MgO phase, polycrystalline MgSeO4 phase agree with the JCPDS database card No. (17-0845) orthorhombic system.
The modified thin films with Ti shows present of the Magnesium titanium oxide (Magnesium Orthotitanate) phase Mg2TiO4 addendum to the Periclase MgO phase, polycrystalline Mg2TiO4 phase agree with the JCPDS database card No. (25-1157) cubic system.
It excludes the parameters hence were processed lattice parameter (a, b and c), unit cell volumes V, where D is average grain size,δ is lattice strain, ρ is dislocation density and N is the number of crystallites).
Moreover; the number of crystallites (N) can be estimated from [34]: (8) The phases concur and XRD data MgO modified with Ti and Se thin film in Table 1.