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Jahdi et al, An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation, IEEE Trans.
Power El. vol. 30, no. 5, pp 2383 (2015)
Knoll et al., "Robust 3.3kV Silicon Carbide MOSFETs with Surge and Short Circuit Capability", Proceedings of the 29th International Symposium on Power Semiconductor Devices & IC's, pp. 243-246, May 2017
Fursin et al., "Reliability aspects of 1200V and 3300V silicon carbide MOSFETs", IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 373-377, May 2017
Horrf et al, “Analysis of Reverse-Recovery Behaviour of SiC MOSFET Body-diode – regarding Dead-Time”, PCIM Europe, pp. 1114, 2015

Gschneidner Jr. et al: Rep.
Annaorazov et al.: J.
Buchelnikov et al.: Phys.
Aksoy et al.: J.
Stuhr et al.: Phys.

Fan et al. [1] focuses on the dynamic strength damage of the single layer reticulated dome.
The damage mechanism of the single layer cylindrical shell is studied by Wang et al. [3].
The material damage influence to the dynamic damage of single layer cylindrical shell are studied by the parameter calculating by Zhi et al. [4].
El Centro earthquake wave with peak acceleration of 620gal and duration of 12s is input.
El Centro earthquake wave with peak acceleration of 700gal and duration of 12s is input.

Jebri et al. [10] reported that better kinetics and superior product quality of sage leaves were obtained by microwaves compared to hot air convective drying.
Jebri et al. [10] reported that either GAB or Peleg model could be applied to represent desorption curves of sage leaves.
Cenkowski et al. [21] reported that the higher isosteric heat of sorption might be due to the greater resistance to water movement from the interior to the surface of the samples.
These values were two orders of magnitude lower than those obtained by Jebri et al [10] and Doymaz and Karasu [9].
El Hadrami , M.

TiAl/Ti5Si3 in situ composites were successfully fabricated by reactive hot-press method from powder mixtures of Ti, Al and Si.
(2+X)Ti+(1+X)Al+Si ¦ XTiAl+Ti5Si3 (1) The mixtures were ball-milled in ethanol for 2 h.
No any starting materials, such as Ti, Al and Si, have been detected in all resultant materials.
The above results confirmed the feasibility of the overall reaction of Ti+Al+Si→TiAl+Ti5Si3.
Huang and E.L.

One such investigation was on the use CVD and PVD diamond tools for finish turning Al-Si alloy.
It has been noted that there are limited researches on cutting forces when involving Al-Si alloys particularly modified, near eutectic Al-Si alloy.
Another material investigated is the 0.5 wt. % Sb treated Al-11%Si alloy.
Figure 2(a) and (b) show the microstructure of the untreated and Sb-treated Al-11%Si alloys.
In addition, the material ductility in terms of El% was 0.4 % for untreated which increased to 1% with the addition of Sb.

In 1985, Ulaby and Dobson et al. [1,2] gave two dielectric mixing models to calculate the dielectric constant of the soil for better predicting the radar echo.
In 2002, Fung et al. [4] improved the IEM method to include fully the phase effect in Green’s function, which gave a better accuracy in bistatic scattering.
The electromagnetic scattering coefficient of the soil surface was calculated, but the changes of the dielectric constant varied with the frequency and moisture et al. are not considered.
K., et al., J.
EL-RAYES, IEEE TRANSACTION ON GEOSCIENCDE AND REMOTE SENSING, vol.

Performance Enhancement of Cntfets with High-Κ Dielectric Rechem Djamil1,a, Benkara Salima2,b and Lamamra Kheireddine2,c 1Laboratory of active components and materials University Larbi Ben M’hidi Oum El Bouaghi 04000, Algeria 2Département sciences et technologies, Faculté des sciences et technologies, Université Larbi Ben M’hidi, Oum El Bouaghi 04000, Algérie aRechem_dj@yahoo.fr, bsali_benkara@yahoo.fr, cl_kheir@yahoo.fr Keywords: Carbon nanotube, Field- effect transistor, Nonequilibrium Green’s Function (NEGF), High-k dielectric, Temperature effect.
Javey et al., High performance n-type carbon nanotube field-effect transistors with chemically doped contacts, Nano Lett. 5 (2005) 345
Le Louarn et al., Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors, Appl.

El-Genk and Saber et al. reported the effectiveness of metallic Ti coatings on suppressing the sublimation of Sb from CoSb3-based skutterudites [9].
Dong et al. fabricated the silica-based composite coatings on the surface of n-type Yb0.3Co4Sb12 and p-type CeFe3CoSb12 skutterudites using hybrid silica sol as raw material [11].
El-Genk and T.

The oxide scale of the aluminum alloy surface was removed through sand blasting, so the obtained roughness surface didn't only actively react with silanol groups in the paint to form Al-O-Si structure [16], but also tended to wet and spread for coatings on the surface.
Song, A.L.
Rohanghiz, E.L.
El-Azab: Prog.