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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 685Performance Enhancement of CNTFETs with High-Κ...

Performance Enhancement of CNTFETs with High-Κ Dielectric

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Abstract:

The potential impact of high permittivity gate dielectrics on the performance of a ballistic nanoscale CNTFET is studied over a wide range of dielectric permittivities with low temperatures ranging from room temperature down to 100 K. Using the non-equilibrium Greens function (NEGF) formalism. Device characteristics such as I_ON/I_OFF current ratio, threshold voltage, the drain induced barrier lowering (DIBL). The effects of temperature varying are also examined.

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Advanced Materials Research III

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Periodical:

Advanced Materials Research (Volume 685)

Pages:

340-344

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.685.340

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Online since:

April 2013

Authors:

Rechem Djamil, Benkara Salima, Lamamra Kheireddine

Keywords:

Carbon Nanotube (CN), Field-Effect Transistor, High-K Dielectric, Nonequilibrium Greens Function (NEGF), Temperature Effect

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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