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SP processed ZnOs, in comparison to commercial one, had smaller both grains and agglomerates of grains.
Under reducing conditions the sensor resistance decreases proportionally to the number of oxygen ions desorbed by alkyl radicals.
This resulted in a large specific area of the grains and a larger number of oxygen ions adsorbed at grain boundaries.
The greater number of adsorbed ions showed a greater potential for being desorbed by the reductive gases, that is better sensitivity.
When it comes to the sensor's high resistance in the air, it can be ascribed to the greater number grains and potential barriers, as the SP processed ZnO was composed of smaller grains than that commercially available ZnO.

The distributions of grain sizes were obtained by taking at least 200 different grain images for the sample and estimating the mean diameters of individual grains by using the J-image software.
Table 1 shows the average grain sizes observed from FeSEM.
Average grain size of samples sintered at varied temperatures.
The increased of μ΄ value with increasing of sintering temperature is attributed to the increase of grain sizes, where larger grains diminish the number of grain boundaries [8].
Therefore, the domain wall will easily move in the larger grains.

The AFM results for all ratios indicate that as the number of pulses increase, the higher the resulted grain size.
The average grain size was between (58.82 nm) to (95.75nm).
It's seen that as the number of pulses increase, the average grain size increase due to cluster formation.
Figure 1 below demonstrates the AFM results while Table 2 sums up the grain sizes.
The AFM results for all ratios indicate that as the number of pulses increase, the higher the resulted grain size.

It has been shown that the decrease of the gas flow rate favors the increase of the mean grain size of the particles and that the increase of the laser intensity seems to provoke an increase of the mean crystal size and/or crystal number.
The grain sizes are between 15 and 25 nm.
Beyond 0.8 kW/cm2, an increase of the mean grain size is observed.
This increase could come from the increase of nanocrystals size and/or number due to the increase of the flame temperature.
At 1.2 kW/cm2, an increase is observed and interpretated by the increase of the size and/or the number of crystalline domains.

The latter explanation predicts that new grains should begin at low angles to old grains.
A histogram of misorientation versus number of boundaries shows a gap at 15-20º.
The larger grains are interpreted as the relict cores of original polygonal grains.
The smaller and/or very irregular grains have formed by recrystallisation from these "parent" grains.
However, grain boundary migration does not itself change the orientation of a growing grain.

The waveforms created in this way are downloaded via an interface and stored in a file with a controlled number of samples.
In addition a number of standard voltage waveforms are available including sine, square, triangle, ramp and pulse.
Moreover, the number of minor loops can equally be observed increasing with the increase of switching frequency.
Measured iron losses, under SPWM excitation at fundamental frequency of 50 Hz and switching frequency of 5 kHz. __...__...: non oriented grain laminations (large grain) ------: non oriented grain laminations (small grain) _______: grain oriented laminations Fig. 10.
Measured hysteresis loop for non oriented grain (large grain) laminations under SPWM excitation at fundamental frequency of 50 Hz and switching frequency of 1 kHz Fig. 11 shows the hysteresis loop area of non oriented grain (large grain) material under SPWM excitation at fundamental output frequency at 50 Hz and switching frequency of 1 kHz.

Grain Boundary Velocities.
Sub-grain Boundary Growth.
The sub-grain mobilities were estimated from the average growth rates of large numbers of sub-grains during more standard annealing experiments outside the SEM.
Grain boundary velocities and mobilities.
Analysis of Grain boundary mobilities.

Post-processing the numerical results for a number of grain sub-sets is needed to represent the elastic lattice strains within the material representative volume element (RVE) chosen for the analysis.
Furthermore, once the model has been calibrated, a number of structural realisations can be studied without further experimental input.
TOF patterns contain large numbers of diffraction peaks, each representing the scattering from a group of grains sharing the orientation of a normal to a set of lattice planes.
Post-processing allows average strain values across a number of grains of similar orientation to be obtained.
Agreement is generally good, considering the relatively small number of grains and Gauss points used for the simulation (27000 Gauss points for 600 grains).

During secondary recrystallisation abnormal grain growth of Goss-oriented grains takes places while normal grain growth is inhibited by particles.
Journal Title and Volume Number (to be inserted by the publisher) 3 exceeding 10°/µm.
A rough estimate of the number of Goss-oriented grains per volume in the deformed as well as in the annealed material shows that about 1 of 12 grains that are left over in the highly deformed material grows during recrystallisation.
Journal Title and Volume Number (to be inserted by the publisher) 5 and the γ-fibre components.
Nucleation of Goss grains.

This leads to defragmentation (pinch-off) of grains, when grain thickness is in the order of the subgrain size.
Eivani explained the peripheral coarse grain structure of extruded 7xxx alloy as abnormal growth of statically recrystallized grains in the partially recrystallized grain assembly [10].
The potential nucleation sites on GB are therefore the number of subgrains in the deformed volume with high-angle grain boundaries [15]: (2) where d is the subgrain size, dG is the initial grain size, and SV is the surface area per unit volume [15].
These grains were characterized by EBSD.
The large grain size on the surface is indicative of gDRX occurrence where the number of nuclei is low (Eq. 5).