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The multilayer devices fabricated have the following structure: ITO/ m-MTDATA(40 nm)/NPB(10 nm) /DCM2(0.05 nm)/ DPVBi (12 nm)/[Alq(5nm)/BPhen(3 nm)]n/Alq(70-8n nm)/LiF(1nm)/Al, Here n=0,1,2,3.
A bilayer of lithiumfluoride (LiF) and aluminium (Al) were used for the cathode.
Al(200nm)/ LiF(1nm) Alq(70-8n nm) DPVBi(12 nm) [Alq(5 nm)/ BPhen(3 nm)]n DCM2(0.05nm) NPB (10 nm) m-MTDATA (40 nm) ITO Fig. 1 The chemical structure of organic materials and the device structure of the OLEDs Results and discussion Fig.2 displays the Normalized EL intensity of the different devices at different voltage. the devices have the same emission EL spectra with the different well of the excton-blocking layer, The normalized EL spectra of the devices shows two main emission peaks at 438 nm and 570 nm originating from DPVBi and DCM2, respectively.
Though the EL output is decreased with the increasing well number, the current efficiency should not be sacrificed.
To be practical, an EL device should possess not only a high brightness but also high EL efficiency.

The size and content of SiC particles contained in the Al/SiCp composites are 30μm and 65% respectively.
Surface roughness (Ra) of Al/SiCp composites is shown in Fig. 2.
This phenomenon is expected in the machining of Al/SiCp composites.
El-Gallab: Journal of Materials Processing Technology, Vol. 56 (1996), pp. 643-654
[6] Z.X.Tie and B.Zhao: Manufacturing Technology & Machine Tool, Vol. 4 (2003), pp. 36-38 (In Chinese) [7] El-Gallab.M and Sklad.

., Chutung, Hsinchu 31040, Taiwan atcchao@itri.org.tw, bHCYeh7652@itri.org.tw, cchinhuichou@itri.org.tw, dMHJang@itri.org.tw, eMRTseng@itri.org.tw, Keywords: Electroluminescence (EL), hybrid OLED, PhOLED.
Zhang et al. [15] disclosed a 23.3 lm/w device at 1000 nits with a dendritic host H2.
The LiF (1 nm) / Al (100 nm) cathode is formed by thermal evaporation under vacuum at the pressure of 3x10-6 torr.
(a)EL characteristics, (b)luminance-voltage and (c)power efficiency-luminance curves of yellow devices Table 2.
The devices structures were glass/ITO/PEDOT:PSS/NPB:6% dopant/TmPyPB/LiF/Al.

EL spectra and CIE coordinates of the devices were measured by a TOPCON SR-1 spectrophotometer and the luminance-current density-voltage characteristics were recorded simultaneously with measurement of the EL spectra by combining the spectrometer with Keithley model 2400 programmable voltage-current source.
After the doping of rubrene into NPB, the EL spectra of OLEDs show white-light emission with a large broad wavelength from 400 to 700 nm, as shown in Fig. 5.
Current Density (mA/cm2) 0 20 40 60 80 100 120 140 Efficiency (cd/A) 0.0 0.5 1.0 1.5 2.0 ITO/MTDATA(15nm)/NPB(40nm)/BCP(25nm)/LiF(0.7nm)/Al(180nm) ITO/MTDATA(15nm)/NPB(40nm)/BCP(10nm)/Alq(15nm)/LiF(0.7nm)/Al(180nm) ITO/MTDATA(15nm)/NPB(40nm)/BCP(10nm)/BCP:Alq(1:2)(15nm)/LiF(0.7nm)/Al(180nm) ITO/MTDATA(15nm)/NPB(40nm)/BCP(10nm)/BCP:Alq(1:4)(15nm)/LiF(0.7nm)/Al(180nm) Fig. 4.
Wavelenght (nm) 300 400 500 600 700 800 EL Intensity (a.u) 0.00 0.02 0.04 0.06 0.08 0.10 ITO/ MTDATA (15nm) / NPB:Rubrene0.5%(40nm) /BCP(10nm) / BCP:Alq(1:2)(15nm) / LiF(0.7nm) /Al(180nm) ITO/ MTDATA (15nm) / NPB:Rubrene1.0%(40nm) /BCP(10nm) / BCP:Alq(1:2)(15nm) / LiF(0.7nm) /Al(180nm) ITO/ MTDATA (15nm) / NPB:Rubrene2.0%(40nm) /BCP(10nm) / BCP:Alq(1:2)(15nm) / LiF(0.7nm) /Al(180nm) Fig. 5.
The EL spectra of white-light OLEDs with different concertrations of Rubrene.

EL Zhang[7] successfully fabrication of Al-TiC composite using this processes.
Shyu etal [16] used Al–5.1Cu–6.2Ti was used as a matrix materialin this process for fabrication Al-TiC composite.
R N Rai et al [20] observed that CF are less in Al-TiC PMMC than those of Al–TiAl3, Al–Si and pure Al as shown in fig 4.
[7] El Zhang, B Yang, S Y Zeng, QC Li, M Z Ma, Experimental study on reaction synthesis of TiC in Al-Ti-C system, ACTA Metallurgic Sinica 11:4 (1998) 255-260
[10] El Zhang, Zeng Xiaochun, Zeng Songyan, Li Aingchun, Microstructure and properties of Al/TiC composite prepared by reaction synthesis, Transaction of NFsoc, 16:1(1996) 114-119

El-Nahass et al. [4] have prepared CdGa2Se4 powder through reacting process of CdS and Ga2S3.
Thermal evaporation technology is implemented for the preparation of CdGa2S4 thin film by El-Nahass et al. [11].
El-Nahass, H.S.
El-Nahass, E.A.A.
El-Shazly, A.M.A El-Barry, H.S.S.

El Hassanin, C.
El Hassanin, et al, Chemical surface finishing of electron beam melted Ti6Al4V using HF-HNO3 solutions, J.
El Hassanin, M.
El Hassanin, M.A.
El Hassanin, A.T.

El Moussaouy, M.
El Hadi, A.
El Hadi, A.
El Hadi, M.
El Hadi, A.

El Aoud, Y.
El Boudour El Idrissi, R.
El Halim, L.
El Halim, L.
[24] A.L.

Elnaggar1,2,a,*, AL-Hassan M.
El-Shall: ACS Catal.
El-bab, K.
El-Moneim: Key Eng.
El-naggar, and A.