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Versluijs et al. - Interface 2003
Skordas et al. - Proceedings of SPIE Vol. 5376 p 471, 2004
Hwang et al. - Proceedings of SPIE Vol. 4690 (2002) pp 1119-1125 [4] K.
Tanaka et al. - Proceedings of SPIE Vol. 5039 (2003) pp 1366-1381 [5] M.
Jung et al. - Proceedings of SPIE Vol. 5039 (2003) pp 1298-1303 [6] S.

Annealed martensite based TRIP steels have been investigated by Sugimoto et al.[13,14].
The tensile properties of the developed steel are shown to have TS of 1100MPa and El of 29%.
The role of Al is to increase the stacking fault energy.
Zackay et al. : Trans.
Chin et al.: Materials Research Society of Korea, Vol. 15, (2005), p.115 [22] M.J.

., Chutung, Hsinchu 31040, Taiwan atcchao@itri.org.tw, bHCYeh7652@itri.org.tw, cchinhuichou@itri.org.tw, dMHJang@itri.org.tw, eMRTseng@itri.org.tw, Keywords: Electroluminescence (EL), hybrid OLED, PhOLED.
Zhang et al. [15] disclosed a 23.3 lm/w device at 1000 nits with a dendritic host H2.
The LiF (1 nm) / Al (100 nm) cathode is formed by thermal evaporation under vacuum at the pressure of 3x10-6 torr.
(a)EL characteristics, (b)luminance-voltage and (c)power efficiency-luminance curves of yellow devices Table 2.
The devices structures were glass/ITO/PEDOT:PSS/NPB:6% dopant/TmPyPB/LiF/Al.

Eurycomanone as one of the quassinoids has the highest concentration among bioactive components of EL roots, thus more commonly used as the marker compound for the EL roots [7].
Thus, it can be concluded that 90 minutes duration is the ideal extraction time for EL.
Ma, et al. [12].
Three different size of EL roots sample had been studied which are 300, 500 and 700 μm.
Summary The processing parameters affect the extraction yield of EL roots using conventional thermal heating technique were the sample size, time and temperature of extraction and mass ratio of EL sample to the solvent used.

(a) I-V curves of EL devices with ultra thin TiO2 on different pretreatment of ITO.
(b) EL efficiency vs current density of EL devices with ultra thin TiO2 on different pretreatment of ITO.
(a) I-V curves of EL devices with different pretreatment of ITO.
(b) EL efficiency vs current density of EL devices with different pretreatment of ITO.
Figure 1 (a) Figure 1 (b) Figure 2 (a) Figure 2 (b) 2´2mm2 2´2mm2 2´2mm2 (a) (b) (c) Figure 3 Figure 4 Table I Device Configuration A ITO/CF4 plasma/NPB/AlQ/LiF/Al B ITO/H2 plasma/NPB/AlQ/LiF/Al C ITO/ NPB/AlQ/LiF/Al D ITO/CF4 plasma/TiO2/NPB/AlQ/LiF/Al E ITO/H2 plasma/ TiO2/NPB/AlQ/LiF/Al F ITO/ TiO2/NPB/AlQ/LiF/Al Table II Plasma treatment Rmax (nm) Rms (nm) Bearing (%) Surface energy (mN/m) CF4 2.84 0.279 7.431 55 H2 4.399 0.438 5.215 67.7 Non 5.038 0.755 10.149 67.2 References [1] Friend R H 1999 Nature 397 121

Ultimate tensile strength (UTS) and elongation (E.L.%) affected are affected by the SDAS [11, 15].
The Al-7 wt.% Si- 0.6 wt.% Mg (A357) alloys with different Ti additions were prepared from Al-11.6 wt.% Si-1.1 wt.% Mg and Al-5 wt.% Ti base alloys.
For the as-cast alloys, Ti addition causes a slight increase of the YS as compared with unrefined A357 alloy, while the UTS and E.L.% are nearly identical with that of the unrefined alloy, corresponding to the microstructural evolution of the as-cast alloys.
However, the UTS and E.L.% of the Ti refined alloys are nearly identical with that of the unrefined alloy, due to the similar values of their SDAS.
For the as-cast alloys, the YS of Ti refined alloys are slightly superior to that of the unrefined A357 alloy, while the UTS and E.L.% of them are nearly identical with that of the unrefined alloy, which corresponds to the microstructural evolution of the as-cast alloys.

Coarse grains of commercial 5052 Al and 5083 Al alloys were refined by the accumulative roll bonding (ARB) process.
In this study, two commercial Al-Mg alloys that have different Mg concentration, 5052 Al and 5083 Al alloys were ARB processed.
Experimental Procedures Rectangular plates with a dimension of 2mm (thickness) x 30mm x 50mm were cut from commercial purity 5052 (2.5Mg-0.25Cr-Al) and 5083 Al (4.5Mg-0.15Cr-0.7Mn-Al) alloy sheets.
The 5083 Al alloy has slightly smaller dislocation cells (Fig. 2 (a)) than the 5052 Al alloy (Fig. 1 (a)).
Tensile properties of the ARB processed 5052 and 5083 Al alloys Number of 5052 Al alloy 5083 Al alloy ARB cycles YS [MPa] TS [MPa] El [%] YS [MPa] TS [MPa] El [%] 0 (as-received) 125.3 196.1 34.4 99.1 296.2 32.8 1 237.2 295 12.3 259.4 418.7 14.7 2 299.2 340 11.2 284.4 445.1 12.2 3 309.7 354.4 8.8 348.6 434.6 11.5 4 310.9 359.1 8.7 375.4 436.6 11.6 5 369.7 388.2 5.8 6 316.5 386.2 5.6 7 238.5 288.2 8.8 (YS: yield strength, TS: tensile strength, El: elongation to failure) Fig. 1.

Roelkens, at al., III-V/Si photonics by die-to-wafer bonding, Materials Today, vol. 10, no. 7-8 (July-August 2007), pp. 36-43
[14] Onur Fidaner, et al., GeSiGe Quantum-Well Waveguide Photodetectors on Silicon for the Near-Infrared, IEEE Photon.
[23] Shin-ichi Saito, et al., Silicon light-emitting transistor for on-chip optical interconnection, Appl.
[39] Massimo Gurioli, et al., Thermal escape of carriers out of GaAs/AlxGa1-xAs quantum-well structures, Phys.
[40] Xinwei Zhao, et al., Quantum confinement in nanometer-sized silicon crystallites, Phy.

Electro luminescence (EL) from the diodes was measured under current pulses (1-50 mA) with a frequency of ~ 30 Hz.
PL was excited by an Ar-ion laser emitting at 514 nm (or 457 nm) with excitation Al n-type Si substrate Al Al SiO2 p+ DL p+n hν power of 1-1000 mW and the beam was focused to 100 µm spot.
IEL/Id (a.u.) 1mA (x0.33) EL, Id 50mA (x0.1) 1mW (x1) PL, PEXC 190mW (x0.06) TMEAS=30K Photon energy (eV) Forward current Id=1mA experimental data Fit: individual peaks overall spectra D3D2 D1 EL signal (a.u.)
TMEAS=300K 50mW PL, PEXC 800mW x0.1 Photon energy (eV) 1mA EL, Id 50mA Fig. 2.
The increase in the injection level in EL or/and PL excitation regime leads to a blue-shift of the peak positions.

Al Dawood, I.S.
El Mahallawi, M.E.
Abd El Azim and M.
Al Dawood, I.S.
El Mahallawi, M.E.