Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography

S.I. Misat; G.G. Grozev; J.J. Versluijs

doi:10.4028/www.scientific.net/SSP.103-104.71

Paper Titles

Application of UV/VIS-Spectroscopy for Determination of Complexing Agent Stability in APM and Like Mixtures Thereof
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Plasma Cleaning for W Polymetal Gate
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Development of New Batch-Type Plasma Assisted NOR (Native-Oxide-Removal) Dry Cleaning Equipment
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Evaluation of Wafer Drying Methods for GIGA-LEVEL Device Fabrication
p.67

Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography
p.71

Performance of a Linear Single Wafer IPA Vapour Based Drying System
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Effective Rinse Aiming at Water-Mark-Free Drying for Single-Spin Wet Cleaning Process
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Insights into Watermark Formation and Control
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Occurrence of Arsenic-Based Defects and Techniques for Their Elimination
p.87

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Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography

Abstract:

Recently, the reduction of pattern collapse in 193nm resists with the help of a surfactinated rinse has been widely reported in the literature [1-6]. This additional step was introduced between the DI rinse that follows the developer puddle, and the final dry spin step. The present work demonstrates that the latitude of 100nm, 90nm and 75nm dense line processes can be significantly extended with an appropriate surfactant rinse through pattern collapse reduction. Simultaneously, a considerable reduction of organic defectivity is reported on blanket resist wafers.