Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography

Abstract:

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Recently, the reduction of pattern collapse in 193nm resists with the help of a surfactinated rinse has been widely reported in the literature [1-6]. This additional step was introduced between the DI rinse that follows the developer puddle, and the final dry spin step. The present work demonstrates that the latitude of 100nm, 90nm and 75nm dense line processes can be significantly extended with an appropriate surfactant rinse through pattern collapse reduction. Simultaneously, a considerable reduction of organic defectivity is reported on blanket resist wafers.

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

71-74

DOI:

10.4028/www.scientific.net/SSP.103-104.71

Citation:

S.I. Misat et al., "Surfactionated Rinse against Pattern Collapse and Defectivity in 193nm Lithography", Solid State Phenomena, Vols. 103-104, pp. 71-74, 2005

Online since:

April 2005

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Price:

$35.00

[1] J.J. Versluijs et al. - Interface (2003).

[2] S. Skordas et al. - Proceedings of SPIE Vol. 5376 p.471, (2004).

[3] Y. -S. Hwang et al. - Proceedings of SPIE Vol. 4690 (2002) pp.1119-1125.

[4] K. Tanaka et al. - Proceedings of SPIE Vol. 5039 (2003) pp.1366-1381.

[5] M. -H. Jung et al. - Proceedings of SPIE Vol. 5039 (2003) pp.1298-1303.

[6] S. Hien et al. - Proceedings of SPIE Vol. 4690 (2002).

[1] 2 3 4.

[1] : TMAH Development.

[2] : DIW Rinse.

[3] : Surfactant Rinse Dispense.

[4] : Dry out.

[5] [10] [15] 0 0. 2 0. 4 0. 6 0. 8 1 DOF (mm) EL (%) STD DI RINSE SPDR.

[5] [10] [15] [20] 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 DOF (mm) EL (%) STD DI Rinse SPDR.

[5] [10] [15] 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 DOF (µm) EL (%) STD DI Rinse SPDR.

[4] Figure 3: SEM Cross-sections at best focus and best energy settings of 90nm CD dense lines in GAR 8105G1 comparing the standard DI rinse (a) to the surfactant rinse process (b). 1214.

[38] -5 584.

[37] 45 115 8 10.

[62] 7 2 39 8 1 32 7 0 269 2 14 14 0.

300 600 900 1200 Particle Adders 0. 16 um 0. 2 um 0. 3 um 0. 4 um 0. 5 um 0. 6 um 0. 7 um 0. 85 um Adders Std DI Rinse Adders SPDR Adders Triple Rinse Figure 4: Defect adders from the standard DI rinse, the Surfactant rinse and a triple DI rinse time. Inset: comparative improvement on defect count by the surfactant rinse compared to the standard DI rinse. -0. 4.

DOI: 10.5121/vlsic.2012.3311

0. 4 0. 8 1. 2 1. 6 0. 0% 0. 2% 0. 4% 0. 6% 0. 8% 1. 0% 1. 2% 1. 4% Normalized Surfactant Loading Defect Adders (Normalized).

[20] [40] [60] 80Contact Angle (degrees) Figure 5. Contact angle and defect count, as a function of the Normalized surfactant loading. (a) Std rinse (b) SPDR . 0. 75% STD DI SPDR.

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